SFF23N60S2TXV [SSDI]
Transistor;
| 型号： | SFF23N60S2TXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF23N60S1
SFF23N60S2
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
21 AMP, 600 Volts, 320 mΩ
Avalanche Rated N-channel
MOSFET
SMD1, 2
Features:
•
•
•
•
•
•
•
•
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Hot Case power SMD
Low Total Gate Charge
Fast Switching
Note
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
1/ maximum current limited by package configuration
Maximum Ratings
Symbol
Value
Units
600
Drain - Source Voltage
VDSS
V
±30
±40
continuous
transient
Gate – Source Voltage
VGS
V
A
@ TC = 25ºC
@ TC = 125ºC
21
10
ID1
ID2
Max. Continuous Drain Current (package limited)
30
30
Pulsed Drain (Instantaneous) Current (Tj limited)
Max. Avalanche current
ID3
IAR
A
A
@ TC = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
1500 / 30
300
Single / Repetitive Avalanche Energy
Total Power Dissipation
EAS / EAR
PD
mJ
W
-55 to +150
0.42 (typ 0.3)
Operating & Storage Temperature
Maximum Thermal Resistance
ºC
TOP & TSTG
R0JC
Junction to Case
ºC/W
SMD 1
SMD 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0029B
DOC
SFF23N60S1
SFF23N60S2
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250μA
600
620
––
V
BVDSS
RDS(on)
VGS = 10V, ID = 11.5A, Tj= 25oC
VGS = 10V, ID = 25A, Tj=25oC
––
––
––
300
300
670
320
––
––
Drain to Source On State Resistance
Gate Threshold Voltage
mΩ
V
GS =10V, ID = 11.5A, Tj= 125oC
V
V
DS = VGS, ID = 4mA, Tj= 25oC
2.0
––
3.5
3.4
4.5
––
V
VGS(th)
IGSS
DS = VGS, ID = 1mA, Tj= 25oC
VGS = ±30V, Tj= 25oC
VGS = ±20V, Tj= 125oC
––
––
20
30
±100
––
nA
Gate to Source Leakage
V
DS = 600V, VGS = 0V, Tj = 25oC
VDS = 480V, VGS = 0V, Tj =
125oC
––
––
0.1
0.085
25
1
μA
mA
Zero Gate Voltage Drain Current
Forward Transconductance
IDSS
V
DS = 10V, ID = 11.5A, Tj = 25oC
10
20
––
Mho
nC
gfs
VGS = 10V
VDS = 300V
ID = 16.5A
––
––
––
100
23
45
––
––
––
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS = 10V
––
––
––
––
28
33
80
23
––
––
––
––
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDS = 300V
nsec
V
ID = 16.5A
RG = 2.0Ω, pw= 3us
IF = 23A, VGS = 0V
IF = 16.5A, VGS = 0V
––
––
1.0
0.87
1.5
––
Diode Forward Voltage
VSD
––
––
––
210
tbd
1.3
250
––
––
nsec
A
μC
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
IRM(rec)
Qrr
IF = 16.5A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
––
––
––
4100
400
120
––
––
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
SMD1
SMD2
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0029B
DOC
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