SFF23N60Z [SSDI]
Avalanche Rated N-channel MOSFET; 雪崩额定N通道MOSFET
| 型号： | SFF23N60Z |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Avalanche Rated N-channel MOSFET |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF23N60M
SFF23N60Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
15 AMP, 600 Volts, 320 mΩ
Avalanche Rated N-channel
MOSFET
TO-254
TO-254Z
Features:
•
•
•
•
•
•
•
•
Advanced low gate charge process
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Note 1: maximum current limited by package configuration
Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
VDSS
600
V
±30
±40
continuous
transient
Gate – Source Voltage
VGS
V
A
@ TC = 25ºC
@ TC = 125ºC
ID1
ID2
15
7
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
ID3
IAR
23
23
A
A
@ TC = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
Single / Repetitive Avalanche Energy
Total Power Dissipation
EAS / EAR
PD
1500 / 30
150
mJ
W
Operating & Storage Temperature
-55 to +150
0.83 (typ.0.6)
ºC
TOP & TSTG
Rjc
Maximum Thermal Resistance
(Junction to Case)
ºC /W
TO254
(M)
TO254Z
(Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0028A
DOC
SFF23N60M
SFF23N60Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250μA
BVDSS
RDS(on)
600
620
––
V
VGS = 10V, ID = 11.5A, Tj= 25oC
VGS = 10V, ID = 25A, Tj=25oC
VGS = 10V, ID = 11.5A, Tj= 125oC
––
––
––
300
300
670
320
––
––
Drain to Source On State Resistance
Gate Threshold Voltage
mΩ
V
DS = VGS, ID = 4mA, Tj= 25oC
2.0
––
3.5
3.4
4.5
––
VGS(th)
IGSS
IDSS
gfs
V
VDS = VGS, ID = 1mA, Tj= 25oC
VGS = ±30V, Tj= 25oC
––
––
20
30
±100
––
Gate to Source Leakage
nA
VGS = ±20V, Tj= 125oC
VDS = 600V, VGS = 0V, Tj = 25oC
––
––
0.1
0.085
25
1
μA
mA
Zero Gate Voltage Drain Current
Forward Transconductance
V
DS = 480V, VGS = 0V, Tj = 125oC
VDS = 10V, ID = 11.5A, Tj = 25oC
10
20
––
Mho
nC
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
GS = 10V
DS = 300V
ID = 16.5A
GS = 10V
DS = 300V
Qg
Qgs
Qgd
––
––
––
100
23
45
––
––
––
V
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
td(on)
tr
td(off)
tf
––
––
––
––
28
33
80
23
––
––
––
––
V
nsec
V
ID = 16.5A
RG = 2.0Ω, pw= 3us
Diode Forward Voltage
IF = 23A, VGS = 0V
IF = 16.5A, VGS = 0V
––
––
1.0
0.87
1.5
––
VSD
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
IRM(rec)
Qrr
––
––
––
210
tbd
1.3
250
––
––
nsec
A
μC
IF = 16.5A, di/dt = 100A/usec
VDS = 15.2V, 1 sec, Ta = 25oC
SOA1
SOA2
––
––
16.5
1.05
Safe Operating Area
A
V
DS = 65V, 1 sec, Ta = 25oC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS = 0V
Ciss
Coss
Crss
––
––
––
4100
400
120
––
––
––
VDS = 25V
f = 1 MHz
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines / lead bending options / pinout configurations Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0028A
DOC
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