SDR6642CTUB [SSDI]
Rectifier Diode,;
| 型号： | SDR6642CTUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR6642UB and
SDR6642CTUB
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information1/
CT __ __
SDR6642
300 mA
75 VOLTS
5 nsec HYPERFAST RECOVERY
CENTER TAP DIODE
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Screening
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
UB = UB Surface Mount Package
FEATURES:
•
•
•
•
•
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Hyperfast Reverse Recovery Time: 3.5 nsec typ
Hermetically Sealed Surface Mount Package
Planar Passivated Chip
Configuration
__ = Single Die
CT = Common Cathode
Low Capacitance: 1.3 pf typ
TX, TXV, and S-Level Screening Available2/
Replacement for 1N6642UB and 1N6642UBCC
Device Type (VRWM)
6642 = 75 V
MAXIMUM RATINGS3/
RATING
SYMBOL
VALUE
UNIT
V
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRWM
VR
75
Average Rectified Forward Current
300
2.5
IO
mA
A
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to
reach equilibrium between pulses, TC = 25°C)
IFSM
-65 to +175
100
Operating & Storage Temperature
TOP and TSTG
RθJC
°C
Thermal Resistance
(Junction to Case)
°C/W
NOTES:
UB
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
4/ Per leg for SDR6642CTUB.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0207A
DOCX
SDR6642UB and
SDR6642CTUB
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS3/4/
CHARACTERISTICS
SYMBOL
TYP
MAX
UNIT
Vdc
TA = 25°C
TA = 150°C
TA = -55°C
VF1
VF2
VF3
0.71
0.49
0.84
0.8
0.8
--
Maximum Instantaneous Forward Voltage Drop
(Pulsed, IF = 10 mA)
TA = 25°C
TA = 150°C
TA = -55°C
VF4
VF5
VF6
0.90
0.73
1.00
1.2
--
1.2
Maximum Instantaneous Forward Voltage Drop
(Pulsed, IF = 100 mA)
Vdc
IR = 100 µA
BVR
135
100
Vdc
nA
Minimum Breakdown Voltage
VR = 20 V
VR = 100 V
15
80
25
--
Maximum Reverse Leakage Current
(300 μs Pulse Minimum, TA = 25°C)
IR1
Maximum Reverse Leakage Current
VR = 75 V
IR2
IR3
IR4
CJ1
CJ2
trr
80
500
nA
μA
μA
pf
(300 μs Pulse Minimum, TA = 25°C)
VR = 20 V
VR = 100 V
25
60
50
--
Maximum Reverse Leakage Current
(300 μs Pulse Minimum, TA = 150°C)
Maximum Reverse Leakage Current
(300 μs Pulse Minimum, TA = 150°C)
VR = 75 V
VR = 0 V
100
5.0
2.8
5.0
40
Maximum Junction Capacitance
(TA = 25°C , f = 1 MHz)
1.3
Maximum Junction Capacitance
(TA = 25°C , f = 1 MHz)
VR = 1.5 V
1.2
3.5
pf
Maximum Reverse Recovery Time
(IF = IR = 10 mA, IRR = 1 mA)
nsec
DIMENSIONS (in.)
CASE OUTLINE: UB
Pin Assignment
DIM
MIN
0.046
0.115
0.085
--
MAX
PIN
1
UB*
CTUB
BH
BL
BW
CL
0.056
0.128
0.108
0.128
Cathode
Anode
Anode
Anode 1
Anode 2
Cathode
2
3
Shielding
(connected to lid)
Shielding
(connected to lid)
4
CW
--
0.108
LL1
LL2
LS1
LS2
0.022
0.017
0.035
0.071
0.038
0.035
0.039
0.079
CTUB
(common cathode)
UB*
(single die)
LW
0.016
0.024
*For single die (UB) - Recommended to connect Pin 2 & Pin 3
together at the board level.
R
--
0.008
NOTES:
R1
R2
--
--
0.012
0.022
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
4/ Per leg for SDR6642CTUB.
*Dimensions are Pre-Solder Dip
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0207A
DOCX
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