SDR6643SMSTX [SSDI]

Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN;
SDR6643SMSTX
型号: SDR6643SMSTX
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

二极管
文件: 总2页 (文件大小:112K)
中文:  中文翻译
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SDR6638, SDR6642, SDR6643,  
& SDR4150 SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
300 mA  
Designer’s Data Sheet  
50 - 125 VOLTS  
Part Number/Ordering Information 1/  
4.5 - 6.0 nsec HYPER FAST RECOVERY  
RECTIFIER  
__ __  
SDR____  
Screening 2/  
__ = Not Screened  
TX = TX Level  
FEATURES:  
Hyper Fast Reverse Recovery Time 4.5 - 6 ns  
Max  
Hermetically Sealed  
Planar Passivated Chip  
For High Efficiency Applications  
Available in Axial, Subminiature Round Tab  
& Subminiature Square Tab Versions  
TX, TXV, and S-Level Screening Available2/  
Replacement for 1N6638, 1N6642, 1N6643, &  
1N4150-1  
TXV = TXV  
S = S Level (for SM, use –S)  
Package Type  
__ = Axial Leaded  
SM = Surface Mount Round Tab  
(MELF)  
SMS = Surface Mount Square Tab  
Device Type ( VRWM )  
6638 = 125 V  
6642 = 75 V  
Metallurgical Class 3 Bond  
6643 = 50 V  
4150 = 75 V  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL  
VALUE  
UNIT  
SDR6638  
SDR6642  
SDR6643  
SDR4150  
125  
75  
50  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
VRWM  
VR  
Volts  
75  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)  
IO  
300  
mAmps  
Peak Surge Current  
2.5  
IFSM  
Amps  
°C  
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach  
equilibrium between pulses, TC = 25°C)  
-65 to +175  
Operating & Storage Temperature  
TOP and TSTG  
Thermal Resistance  
SM and SMS- Junction to End Tab  
Axial- Junction to Lead @ .375”  
RθJE  
RθJL  
100  
325  
°C/W  
NOTES:  
1/ For Ordering Information, Price, and Availability- Contact  
Factory.  
Axial Leaded  
SMS  
SM  
2/ Screening Based on MIL-PRF-19500. Screening Flows  
Available on Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics  
@25ºC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0126B  
DOC  
SDR6638, SDR6642, SDR6643,  
& SDR4150 SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
3/  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
VF1  
LIMIT  
UNIT  
SDR6638  
SDR6642  
SDR6643  
SDR4150  
0.8  
0.8  
1.0  
Maximum Instantaneous Forward Voltage Drop  
Vdc  
(Pulsed, TA = 25°C) @ IF = 10mA  
0.74  
SDR6638 @ IF = 200mA  
SDR6642 @ IF = 100mA  
SDR6643 @ IF = 100mA  
SDR4150 @ IF = 100mA  
1.1  
1.2  
1.2  
VF2  
VF3  
BVR  
Vdc  
Vdc  
Vdc  
0.92  
Maximum Instantaneous Forward Voltage Drop (Pulsed)  
IF = 100mA, TA = -55°C  
1.3  
SDR6638  
SDR6642  
SDR6643  
SDR4150  
125  
100  
75  
Minimum Breakdown Voltage  
Ir = 100 μA  
75  
SDR6638 @ VR = 20V  
SDR6642 @ VR = 20V  
SDR6643 @ VR = 20V  
SDR4150 @ VR = 50V  
35  
25  
50  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 25°C)  
IR1  
IR2  
IR3  
IR4  
nA  
nA  
μA  
μA  
pf  
100  
SDR6638 @ VR = 100V  
SDR6642 @ VR = 75V  
SDR6643 @ VR = 50V  
500  
500  
500  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 25°C)  
SDR6638 @ VR = 20V  
SDR6642 @ VR = 20V  
SDR6643 @ VR = 20V  
SDR4150 @ VR = 50V  
50  
50  
75  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 150°C)  
100  
SDR6638 @ VR = 100V  
SDR6642 @ VR = 75V  
SDR6643 @ VR = 50V  
100  
100  
160  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 150°C)  
SDR6638  
SDR6642  
SDR6643  
SDR4150  
2.5  
5.0  
5.0  
2.5  
Maximum Junction Capacitance  
(TA = 25°C , f = 1MHz) VR = 0V  
CJ1  
CJ2  
trr  
SDR6638  
SDR6642  
SDR6643  
2.0  
2.8  
2.8  
Maximum Junction Capacitance  
(TA = 25°C , f = 1MHz) VR = 1.5V  
pf  
SDR6638  
SDR6642  
SDR6643  
SDR4150  
4.5  
5.0  
6.0  
4.0  
Maximum Reverse Recovery Time  
(IF = IR = 10 mA, IRR = 1 mA)  
nsec  
AXIAL  
SM  
SMS  
DIMENSIONS  
MIN  
DIMENSIONS  
DIMENSIONS  
MIN  
DIM  
A
MIN  
.056”  
.130”  
1.00”  
.018”  
MAX  
.080”  
.180”  
1.50”  
.022”  
DIM  
A
MAX  
.064”  
.146”  
.022”  
DIM  
A
MAX  
.056”  
.130”  
.010”  
.070”  
.085”  
.210”  
.028”  
---  
B
B
B
.180”  
C
C
C
.022”  
D
D
.001”  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0126B  
DOC  

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