BAV74LT1 [SSC]

Switching Diode; 开关二极管

BAV74LT1

Switching Diode

FEATURES

Power dissipation, PD: 225 mW (TA=25℃)

Forward Current, IF: 200 mA

Reverse Voltage, VR: 50 V

Operating and storage junction temperature

range: TJ, Tstg: -55℃ to +150℃

SOT-23 Plastic-Encapsulate package

Device Making: JA

ELECTRICAL CHARACTERISTICS

Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃.

01/14/2007 Rev. 1.00

www.SiliconStandard.com

BAV74LT1

Disclaimer

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard

Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or

completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other

intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes

as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability,

functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described

herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard

Corporation or any third parties.

01/14/2007 Rev. 1.00

www.SiliconStandard.com

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