BAV74LT1D [ONSEMI]
Monolithic Dual Switching Diode; 单片双开关二极管
| 型号： | BAV74LT1D |
| 厂家： | 
ONSEMI |
| 描述： | Monolithic Dual Switching Diode |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV74LT1G
Monolithic Dual
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
ANODE
1
3
CATHODE
MAXIMUM RATINGS (EACH DIODE)
2
ANODE
Rating
Symbol
Value
50
Unit
Vdc
Reverse Voltage
Forward Current
V
R
3
I
F
200
500
mAdc
mAdc
Peak Forward Surge Current
I
FM(surge)
1
2
THERMAL CHARACTERISTICS
Characteristic
SOT−23
CASE 318
STYLE 9
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1), T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
JA M G
Derate above 25°C
G
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
1
T , T
J
−55 to +150
stg
JA = Device Code
M = Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BAV74LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BAV74LT3G
SOT−23
10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 5
BAV74LT1/D
BAV74LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
V
(BR)
50
−
Vdc
(I
= 5.0 mAdc)
(BR)
Reverse Voltage Leakage Current, (Note 3)
I
R
mAdc
(V = 50 Vdc, T = 125°C)
−
−
100
0.1
R
J
(V = 50 Vdc)
R
Diode Capacitance
C
V
−
−
−
2.0
1.0
4.0
pF
Vdc
ns
D
(V = 0, f = 1.0 MHz)
R
Forward Voltage
F
(I = 100 mAdc)
F
Reverse Recovery Time
t
rr
(I = I = 10 mAdc, I
= 1.0 mAdc, measured at I = 1.0 mA, R = 100 W)
R L
F
R
R(REC)
3. For each individual diode while the second diode is unbiased.
Curves Applicable to Each Anode
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = -ꢀ40°C
A
T = 85°C
A
0.1
0.01
T = 55°C
1.0
0.1
A
T = 25°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Capacitance
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2
BAV74LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAV74LT1/D
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