F15F10F [SMC]
Fast reverse recovery time;
| 型号： | F15F10F |
| 厂家： | 
Sangdest Microelectronic (Nanjing) Co., Ltd |
| 描述： | Fast reverse recovery time |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FTB1F-15F
THRU
FTB10F-15F
Technical Data
Green Products
Data Sheet N1743, Rev. -
FTB1F-15F THRU FTB10F-15F
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features:
Glass Passivated Chip Junction
Reverse Voltage - 100 to 1000 V
Forward Current - 1.5 A
Designed for Surface Mount Application
Fast reverse recovery time
This is a Halogen Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
PIN
1
DESCRIPTION
Input Pin（~）
Input Pin（~）
2
3
4
Output Anode（+）
Output Cathode（-）
Mechanical Data:
Case: ABF
Terminals: Solderable per MIL-STD-750, Method 2026
Weight: 82 mg
Mechanical Dimensions: In mm/mil
ABF
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
FTB1F-15F
THRU
FTB10F-15F
Technical Data
Green Products
Data Sheet N1743, Rev. -
The recommended mounting pad size:
Marking Diagram:
Type number
FTB1F-15F
FTB2F-15F
FTB4F-15F
FTB6F-15F
FTB8F-15F
FTB10F-15F
Marking code
F15F1F
F15 F2F
F15F4F
F15F6F
F15F8F
F15F10F
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
FTB1F-15F
THRU
FTB10F-15F
Technical Data
Green Products
Data Sheet N1743, Rev. -
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FTB1F FTB2F FTB4F FTB6F FTB8F FTB10F
Symbol
VRRM
VRMS
VDC
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Units
-15F
-15F
-15F
-15F
-15F
-15F
100
200
400
600
800
1000
V
V
V
A
70
140
200
280
400
420
600
560
800
700
Maximum DC blocking voltage
100
1000
Average Rectified Output Current
at TA=50℃
Io
1.5
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
Method)
IFSM
50
A
Maximum instantaneous forward voltage at 1.5A
VF
IR
1.3
V
Maximum DC reverse current TA=25 ℃
at rated DC blocking voltage TA=125 ℃
5.0
100
µA
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
CJ
25
80
pF
RθJA
°C/W
Trr
Trr(TYP.)
500
300
Maximum Reverse Recovery Time (Note 3)
ns
Junction Temperature
TJ
-55 to +150
-55 to +150
°C
°C
Storage Temperature Range
TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on glass epoxy PC board with 4×(5×5mm2) copper pad.
3. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
FTB1F-15F
THRU
FTB10F-15F
Technical Data
Green Products
Data Sheet N1743, Rev. -
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
FTB1F-15F
THRU
FTB10F-15F
Technical Data
Green Products
Data Sheet N1743, Rev. -
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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