F15F10F [SMC]

Fast reverse recovery time;
F15F10F
型号: F15F10F
厂家: Sangdest Microelectronic (Nanjing) Co., Ltd    Sangdest Microelectronic (Nanjing) Co., Ltd
描述:

Fast reverse recovery time

文件: 总5页 (文件大小:161K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FTB1F-15F  
THRU  
FTB10F-15F  
Technical Data  
Green Products  
Data Sheet N1743, Rev. -  
FTB1F-15F THRU FTB10F-15F  
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER  
Features:  
Glass Passivated Chip Junction  
Reverse Voltage - 100 to 1000 V  
Forward Current - 1.5 A  
Designed for Surface Mount Application  
Fast reverse recovery time  
This is a Halogen Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
PIN  
1
DESCRIPTION  
Input Pin~)  
Input Pin~)  
2
3
4
Output Anode+)  
Output Cathode-)  
Mechanical Data:  
Case: ABF  
Terminals: Solderable per MIL-STD-750, Method 2026  
Weight: 82 mg  
Mechanical Dimensions: In mm/mil  
ABF  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
FTB1F-15F  
THRU  
FTB10F-15F  
Technical Data  
Green Products  
Data Sheet N1743, Rev. -  
The recommended mounting pad size:  
Marking Diagram:  
Type number  
FTB1F-15F  
FTB2F-15F  
FTB4F-15F  
FTB6F-15F  
FTB8F-15F  
FTB10F-15F  
Marking code  
F15F1F  
F15 F2F  
F15F4F  
F15F6F  
F15F8F  
F15F10F  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
FTB1F-15F  
THRU  
FTB10F-15F  
Technical Data  
Green Products  
Data Sheet N1743, Rev. -  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FTB1F FTB2F FTB4F FTB6F FTB8F FTB10F  
Symbol  
VRRM  
VRMS  
VDC  
Characteristic  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Units  
-15F  
-15F  
-15F  
-15F  
-15F  
-15F  
100  
200  
400  
600  
800  
1000  
V
V
V
A
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Average Rectified Output Current  
at TA=50  
Io  
1.5  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load (JEDEC  
Method)  
IFSM  
50  
A
Maximum instantaneous forward voltage at 1.5A  
VF  
IR  
1.3  
V
Maximum DC reverse current TA=25 ℃  
at rated DC blocking voltage TA=125 ℃  
5.0  
100  
µA  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
CJ  
25  
80  
pF  
RθJA  
°C/W  
Trr  
Trr(TYP.)  
500  
300  
Maximum Reverse Recovery Time (Note 3)  
ns  
Junction Temperature  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Storage Temperature Range  
TSTG  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on glass epoxy PC board with 4×(5×5mm2) copper pad.  
3. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
FTB1F-15F  
THRU  
FTB10F-15F  
Technical Data  
Green Products  
Data Sheet N1743, Rev. -  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
FTB1F-15F  
THRU  
FTB10F-15F  
Technical Data  
Green Products  
Data Sheet N1743, Rev. -  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales  
department for the latest version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement .  
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or  
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd  
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,  
products or circuits described in the datasheets.  
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any  
secondary damage resulting from use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics  
(Nanjing) Co., Ltd.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC  
- Sangdest Microelectronics (Nanjing) Co., Ltd.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations..  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

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