SF10SC4R [SHINDENGEN]
Schottky Rectifiers (SBD) (40V 10A); 肖特基二极管（ SBD ） （ 40V 10A ）
| 型号： | SF10SC4R |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | Schottky Rectifiers (SBD) (40V 10A) |
| 文件： | 总10页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
Schottky Rectifiers (SBD)
Dual
OUTLINE DIMENSIONS
Case : FTO-220
SF10SC4R
40V 10A
Unit : mm
FEATURES
●
Tj150℃
●PRRSM avalanche guaranteed
●Fully Isolated Molding
●Dielectric strength 2kV guaranteed
APPLICATION
●Switching power supply
●DC/DC converter
●Home Appliances, Office Equipment
●Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Operating Junction Temperature
M aximum Reverse Voltage
Tstg
Tj
VRM
VRRSM
IO
IFSM
PRRSM
Vdis
-40～150
150
40
℃
℃
V
V
A
A
W
kV
N･m
Repetitive Peak Surge Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Repetitive Peak Surge Reverse Power
Dielectric Strength
Pulsewidth0.5ms, duty1/40
45
10
150
330
2
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131℃
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃
Pulse width 10μs, Rating of per diode, Tj=25℃
Terminals to case, AC 1 minute
M ounting Torque
TOR (Recommended torque：0.3N･m)
0.5
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
VF
Conditions
Pulse measurement, Rating of per diode
Ratings
M ax.0.55
M ax.3.5
Typ.180
Unit
V
mA
pF
I =5A,
F
Forward Voltage
ReverseCurrent
Junction Capacitance
Thermal Resistance
IR
Cj
VR=VRM , Pulse measurement, Rating of per diode
f=1MHz, VR=10V, Rating of per diode
junction to case
θjc
M ax.2.3 ℃/W
Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd
SF10SC4R
Forward Voltage
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
J u n c t i o n C a p a c i t a n c e C j [ p F ]
SF10SC4R
Reverse Current
1000
100
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=125°C [TYP]
Tc=100°C [TYP]
Tc=75°C [TYP]
1
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
SF10SC4R
Reverse Power Dissipation
20
15
10
5
DC
D=0.05
0.1
0.2
0.3
0.5
SIN
0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
0
Tj = 150°C
V
R
t
p
D=t /T
p
T
SF10SC4R
Forward Power Dissipation
10
8
DC
D=0.8
0.5
SIN
0.3
0.2
6
0.1
0.05
4
2
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150°C
I
O
0
t
p
D=t /T
p
T
SF10SC4R
Derating Curve
20
15
10
5
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
0
0
20
40
60
80
100 120 140 160
Case Temperature Tc [°C]
V = 20V
R
I
O
0
0
V
R
t
p
D=t /T
p
T
SF10SC4R Peak Surge Forward Capability
200
150
100
50
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
0
1
10
100
2
5
20
50
Number of Cycles [cycles]
SBD Repetitive Surge Reverse Power Derating Curve
120
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
I
RP
V
R
I
R
V
RP
0.5I
RP
0
t
p
P
RRSM
= I ´ V
RP RP
SBD
Repetitive Surge Reverse Power Capability
10
1
0.1
1
10
100
Pulse Width tp [ms]
I
RP
V
R
I
R
V
RP
0.5I
RP
0
t
p
P
RRSM
= I ´ V
RP RP
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