SF10SC9 [SHINDENGEN]
Schottky Rectifiers (SBD)(90V 10A); 肖特基二极管( SBD ) ( 90V 10A )![SF10SC9](http://pdffile.icpdf.com/pdf1/p00065/img/icpdf/SF10SC9_344141_icpdf.jpg)
型号: | SF10SC9 |
厂家: | ![]() |
描述: | Schottky Rectifiers (SBD)(90V 10A) |
文件: | 总10页 (文件大小:384K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SHINDENGEN
Schottky Rectifiers (SBD)
Dual
OUTLINE DIMENSIONS
Case : FTO-220
SF10SC9
90V 10A
Unit : mm
FEATURES
●
Tj150℃
●PRRSM avalanche guaranteed
●Fully Isolated Molding
●Dielectric strength 2kV guaranteed
APPLICATION
●Switching power supply
●DC/DC converter
●Home Appliances, Office Equipment
●Telecommunication
RATINGS
●AbsoluteMaximum Ratings (IfnotspecifiedTc=25℃)
Item
Symbol
Tstg
Tj
Conditions
Ratings Unit
-40~150 ℃
StorageTemperature
OperatingJunctionTemperature
Maximum ReverseVoltage
150
90
℃
V
VRM
RepetitivePeakSurgeReverseVoltage
AverageRectifiedForwardCurrent
PeakSurgeForwardCurrent
RepetitivePeakSurgeReversePower
Dielectric Strength
VRRSM
IO
IFSM
Pulse width 0.5ms, duty 1/40
100
10
100
330
2
V
A
A
W
kV
50Hzsinewave, R-load, RatingforeachdiodeIo/2, Tc=120℃
50Hzsinewave, Non-repetitive1cyclepeakvalue, Tj=125℃
Pulsewidth10μs, Ratingofperdiode, Tj=25℃
PRRSM
Vdis Terminalstocase, AC 1minute
TOR (Recommendedtorque:0.3N・m)
MountingTorque
0.5
N・m
●ElectricalCharacteristics (IfnotspecifiedTc=25℃)
Item
Symbol
Conditions
Pulsemeasurement, Ratingofperdiode
Ratings
Max.0.75
M ax.3
Typ.185
Max.2.3 ℃/W
Unit
V
mA
pF
ForwardVoltage
ReverseCurrent
VF
IR
Cj
IF=5A,
VR=VRM , Pulsemeasurement, Ratingofperdiode
f=1MHz, VR=10V, Ratingofperdiode
JunctionCapacitance
ThermalResistance
θjc junction to case
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
SF10SC9
Forward Voltage
10
1
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
Pulse measurement per diode
0.1
0
0.5
1
1.5
2
Forward Voltage VF [V]
J u n c t i o n C a p a c i t a n c e C j [ p F ]
SF10SC9
Reverse Current
1000
100
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=125°C [TYP]
Tc=100°C [TYP]
Tc=75°C [TYP]
1
0.1
Pulse measurement per diode
0.01
0
20
40
60
80
100
Reverse Voltage VR [V]
SF10SC9 Reverse Power Dissipation
60
50
40
30
20
10
0
DC
D=0.05
0.1
0.2
0.3
0.5
SIN
0.8
0
20
40
60
80
100
120
Reverse Voltage VR [V]
Tj = 150°C
0
V
R
t
p
D=t /T
p
T
SF10SC9 Forward Power Dissipation
16
14
12
10
8
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
6
4
2
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150°C
I
O
0
t
p
D=t /T
p
T
SF10SC9
Derating Curve
20
15
10
5
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
0
0
20
40
60
80
100 120 140 160
Case Temperature Tc [°C]
V = 45V
R
I
O
0
0
V
R
t
p
D=t /T
p
T
SF10SC9
Peak Surge Forward Capability
160
140
120
100
80
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
60
40
20
0
1
10
100
2
5
20
50
Number of Cycles [cycles]
SBD Repetitive Surge Reverse Power Derating Curve
120
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
I
RP
V
R
I
R
V
RP
0.5I
RP
0
t
p
P
RRSM
= I ´ V
RP RP
SBD
Repetitive Surge Reverse Power Capability
10
1
0.1
1
10
100
Pulse Width tp [ms]
I
RP
V
R
I
R
V
RP
0.5I
RP
0
t
p
P
RRSM
= I ´ V
RP RP
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