AOI478 [FREESCALE]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AOI478 |
| 厂家： | 
Freescale |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD478/AOI478
100V N-Channel MOSFET
General Description
The AOD478/AOI478 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
backlighting.
consumer, telecom, industrial power supplies and LED
Features
VDS
100V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
11A
< 140mΩ
< 152mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
A
TC=25°C
11
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
8
IDM
24
TA=25°C
TA=70°C
2.5
Continuous Drain
Current
IDSM
A
2
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C
EAS, EAR
5
45
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
23
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
17
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
60
RθJC
2.7
3.3
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AOD478/AOI478
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.8
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.7
24
2.2
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
A
116
225
121
17
140
270
152
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.76
1
V
Maximum Body-Diode Continuous CurrentG
12
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
350
18
9
445
29
16
2
540
35
23
3
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=4.5A
VGS=10V, VDS=50V, RL=8.6Ω,
1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8
4
10.3
5.1
1.6
2.4
8
13
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
6.5
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3
ns
RGEN=3Ω
tD(off)
tf
17
4.5
ns
ns
trr
IF=4.5A, dI/dt=500A/µs
IF=4.5A, dI/dt=500A/µs
14.5
68
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
97
27.5
126
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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AOD478/AOI478
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
15
12
9
VDS=5V
10V
4V
4.5V
6V
6
VGS=3.5V
125°C
3
25°C
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
180
160
140
120
100
2.6
2.4
2.2
2
VGS=10V
ID=4.5A
1.8
1.6
1.4
1.2
1
VGS=4.5V
=4.5V
VGS
ID=3A
VGS=10V
0.8
0
25
50
75
100 125 150 175 200
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
280
260
240
220
200
180
160
140
120
100
1.0E+01
ID=4.5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
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AOD478/AOI478
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
700
600
500
400
300
200
100
0
VDS=50V
ID=4.5A
Ciss
8
6
4
Coss
2
Crss
0
0
2
4
6
8
10
12
0
20
40
VDS (Volts)
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
360
320
280
240
200
160
120
80
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
DC
1ms
10ms
0.1
TJ(Max)=175°C
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.3°C/W
PD
0.1
Ton
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD478/AOI478
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
10
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
10000
1000
100
10
15
12
9
TA=25°C
6
3
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
0.1
1
10
100
1000
5/6
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AOD478/AOI478
100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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