AOI4S60 [AOS]
600V 4A a MOS Power Transistor; 600V 4A的MOS功率晶体管
| 型号： | AOI4S60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V 4A a MOS Power Transistor |
| 文件： | 总7页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4S60/AOI4S60/AOU4S60
600V 4A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
700V
16A
The AOD4S60 & AOI4S60 & AOU4S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
RDS(ON),max
Qg,typ
0.9Ω
6nC
Eoss @ 400V
1.5µJ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO251A
IPAK
TO251
D
Top View
Bottom View
Top View
Top View
Bottom View
Bottom View
D
D
G
G
S
D
S
G
D
S
G
S
S
D
D
G
G
S
S
G
AOD4S60
AOI4S60
AOU4S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
600
±30
4
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
3
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
16
1.6
38
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy H
TC=25°C
EAR
EAS
77
mJ
W
W/ oC
56.8
PD
Power Dissipation B
Derate above 25oC
0.45
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
300
°C
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient A,D
RθJA
45
55
°C/W
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
--
0.5
2.2
°C/W
°C/W
1.8
Rev3: Jan 2012
www.aosmd.com
Page 1 of 7
AOD4S60/AOI4S60/AOU4S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=600V, VGS=0V
600
-
700
-
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
650
-
1
V
-
IDSS
µA
VDS=480V, TJ=150°C
-
10
-
-
IGSS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
-
±100
4.1
0.9
2.4
-
nΑ
V
VGS(th)
VDS=5V,ID=250µA
2.9
3.5
0.78
2
VGS=10V, ID=2A, TJ=25°C
-
-
-
-
-
Ω
Ω
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A, TJ=150°C
IS=2A,VGS=0V, TJ=25°C
VSD
IS
Diode Forward Voltage
0.81
-
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed CurrentC
4
A
ISM
-
16
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-
-
263
21
-
-
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related I
Co(er)
Co(tr)
-
-
17.1
47.7
-
-
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related J
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
-
-
0.75
18
-
-
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
-
-
-
6
1.6
1.8
18
8
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=2A
VGS=10V, VDS=400V, ID=2A,
RG=25Ω
tD(off)
tf
40
12
177
12
1.5
trr
IF=2A,dI/dt=100A/µs,VDS=400V
IF=2A,dI/dt=100A/µs,VDS=400V
IF=2A,dI/dt=100A/µs,VDS=400V
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
Irm
Qrr
µC
Body Diode Reverse Recovery Charge
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.6A, VDD=150V, Starting TJ=25°C
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
K. Wave soldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Jan 2012
www.aosmd.com
Page 2 of 7
AOD4S60/AOI4S60/AOU4S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
6
4
2
0
10
10V
10V
7V
8
6
4
2
0
7V
6V
6V
5.5V
5.5V
5V
5V
VGS=4.5V
VGS=4.5V
0
5
10
DS (Volts)
15
20
0
5
10
15
20
V
V
DS (Volts)
Figure 2: On-Region Characteristics@125°C
Figure 1: On-Region Characteristics@25°C
1.8
1.5
1.2
0.9
0.6
0.3
0.0
100
10
-55°C
VDS=20V
125°C
VGS=10V
1
25°C
0.1
0.01
0
2
4
6
8
10
2
4
6
8
10
ID (A)
VGS(Volts)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
Figure 3: Transfer Characteristics
1.2
1.1
1
3
2.5
2
VGS=10V
ID=2A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Rev3: Jan 2012
www.aosmd.com
Page 3 of 7
AOD4S60/AOI4S60/AOU4S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
12
9
VDS=480V
ID=2A
25°C
6
3
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD (Volts)
Qg (nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ciss
Eoss
Coss
1
Crss
0
0
0
100
200
VDS (Volts)
Figure 10: Coss stored Energy
300
400
500
600
100
200
300
VDS (Volts)
400
500
600
Figure 9: Capacitance Characteristics
100
1000
800
600
400
200
0
TJ(Max)=150°C
TC=25°C
10
1
RDS(ON)
10µs
limited
100µs
DC
1ms
0.1
0.01
10ms
TJ(Max)=150°C
TC=25°C
1E-05 0.0001 0.001
0.01
0.1
1
10
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 12: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 11: Maximum Forward Biased Safe
Operating Area (Note F)
Rev3: Jan 2012
www.aosmd.com
Page 4 of 7
AOD4S60/AOI4S60/AOU4S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.1
R
θJC=2.2°C/W
PD
Ton
T
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
80
60
40
20
0
5
4
3
2
1
0
25
50
75
TCASE (°C)
Figure 14: Avalanche energy
100
125
150
175
0
25
50
75
CASE (°C)
100
125
150
T
Figure 15: Current De-rating (Note B)
Rev3: Jan 2012
www.aosmd.com
Page 5 of 7
AOD4S60/AOI4S60/AOU4S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
300
200
100
0
TA=25°C
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
0.01
0.001
0.0001
PD
Ton
T
Single Pulse
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note G)
Rev3: Jan 2012
www.aosmd.com
Page 6 of 7
AOD4S60/AOI4S60/AOU4S60
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev2: Jul 2011
www.aosmd.com
Page 7 of 7
相关型号：
©2020 ICPDF网 联系我们和版权申明