KSG13003AR [SEMIHOW]
Switch Mode series NPN silicon Power Transistor; 开关模式系列NPN硅功率晶体管
| 型号： | KSG13003AR |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | Switch Mode series NPN silicon Power Transistor |
| 文件： | 总4页 (文件大小：535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSG13003AR
◎ SEMIHOW REV.A0,Mar 2009
KSG13003AR
Switch Mode series NPN silicon Power Transistor
• High voltage, high speed power switching
1.5 Amperes
NPN Silicon Power Transistor
1.5 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-92L
CHARACTERISTICS
SYMBOL
RATING
UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
700
400
9
V
V
V
Collector Current(DC)
1.5
A
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Storage Temperature
ICP
IB
PC
TSTG
TJ
3
0.75
1.5
150
-65~150
A
A
W
℃
℃
Max. Operating Junction Temperature
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
SYMBOL
Test Condition
Min
700
400
Typ.
Max
Unit
V
VCBO
IC=500uA, IE=0
VCEO
IC=5mA, IB=0
VEB=9V,IC=0
V
IEBO
10
35
㎂
*DC Current Gain
hFE1
hFE2
VCE=2V,IC=0.5A
CE=2V,IC=1A
9
5
V
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
1.0
3.0
V
V
V
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1.0
1.2
V
V
VCB=10V, f=0.1MHz
VCE=10V,IC=0.1A
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Cob
fT
21
㎊
㎒
㎲
㎲
㎲
4
ton
tstg
tF
1.1
4.0
0.7
Vcc=125V, Ic=2A
Storage Time
I
B1=0.2A, IB2= -0.2A
RL=125Ω
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
O
Y
9 ~ 16
R
YWW
Z
Pin type (ECB)
S
AR
1 3 0 0 3
YWW
hFE1
15 ~ 25
20 ~ 30
Y; year code, WW; week code
hFE1 Classification
Classification
Z
◎ SEMIHOW REV.A0,Mar 2009
Typical Characteristics
◎ SEMIHOW REV.A0,Mar 2009
Package Dimensions
TO-92L
Dimensions in Millimeters
◎ SEMIHOW REV.A0,Mar 2009
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