HFU2N60 [SEMIHOW]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | HFU2N60 |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
BVDSS = 600 V
DS(on) typ = 4.0 Ω
R
HFD2N60 / HFU2N60
600V N-Channel MOSFET
ID = 1.8 A
D-PAK
I-PAK
2
FEATURES
1
1
3
2
3
Originative New Design
HFD2N60
HFU2N60
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
1.8
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
1.1
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
7.2
A
Gate-Source Voltage
±30
150
1.8
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.4
mJ
V/ns
5.5
Power Dissipation (TA=25 °C) *
Power Dissipation (TC = 25℃)
2.5
44
W
W
- Derate above 25℃
Operating and Storage Temperature Range
0.35
W/℃
℃
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
2.87
Junction-to-Ambient*
Junction-to-Ambient
50
℃/W
110
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,July 2005
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.5
--
4.5
5.0
V
RDS(ON) Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 0.9 A
4.0
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
DS = 600 V, VGS = 0 V
600
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
0.65
V/℃
/ΔTJ
Coefficient
IDSS
V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
--
--
--
330
40
430
52
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
8.0
10.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
40
30
80
80
60
11.5
--
㎱
㎱
VDS = 300 V, ID = 2.0 A,
RG = 25 Ω
40
㎱
(Note 4,5)
30
㎱
Qg
Qgs
Qgd
9.0
1.9
3.8
nC
nC
nC
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
1.8
7.2
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 1.8 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 2.0 A, VGS = 0 V
220
1.1
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=68mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤1.8A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,July 2005
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
450
400
350
300
250
200
150
100
50
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
Coss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 2.0 A
0
0
10
-1
100
101
0
1
2
3
4
5
6
7
8
9
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005
Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [ ℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
※ Notes :
1. Zθ (t) = 2.87 ℃/W M a x .
0.1
JC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ (t)
JC
0.05
-1
10
0.02
0.01
PDM
single pulse
t1
t2
-2
10
100
101
-5
10
-4
10
-3
10
-2
10
-1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,July 2005
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,July 2005
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,July 2005
Package Dimension
TO-252
±0.2
6.6
±0.1
2.3
±0.15
5.35
±0.05
0.5
±0.3
1.2
+0.1
-0.05
0.05
±0.2
±0.2
0.8
+0.1
-0.05
0.5
0.6
2.3typ
2.3typ
◎ SEMIHOW REV.A0,July 2005
Package Dimension
TO-251
±0.2
±0.1
6.6
2.3
±0.15
±0.05
5.35
0.5
±0.15
±0.15
0.75
0.8
+0.1
-0.05
0.5
±0.1
0.6
2.3typ
2.3typ
±0.3
1.2
◎ SEMIHOW REV.A0,July 2005
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