HFU2N60S [SEMIHOW]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | HFU2N60S |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：870K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Nov 2007
BVDSS = 600 V
DS(on) typ = 4.2 Ω
R
HFD2N60S / HFU2N60S
600V N-Channel MOSFET
ID = 1.9 A
D-PAK
I-PAK
2
FEATURES
1
1
3
2
3
Originative New Design
HFD2N60S
HFU2N60S
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 6.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
1.9
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
1.14
7.6
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
±30
120
1.9
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.4
mJ
V/ns
4.5
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
2.5
44
W
W
- Derate above 25℃
0.35
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
2.87
Junction-to-Ambient*
Junction-to-Ambient
50
℃/W
110
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Nov 2007
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
5.0
V
RDS(ON) Static Drain-Source
On-Resistance
4.2
Ω
V
GS = 10 V, ID = 0.95 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
600
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to 25℃
DS = 600 V, VGS = 0 V
0.6
V/℃
/ΔTJ
Coefficient
IDSS
--
--
--
--
1
㎂
㎂
V
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Input Capacitance
--
--
--
280
37
365
48
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
6.0
8.0
Switching Characteristics
td(on)
Turn-On Time
--
--
--
--
--
--
--
9
28
60
58
66
8.0
--
㎱
㎱
VDS = 300 V, ID = 2.0 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
24
28
6.0
1.3
2.6
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
nC
nC
nC
VDS = 480V, ID = 2.0 A,
Qgs
Qgd
VGS = 10 V
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
1.9
7.6
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 1.9 A, VGS = 0 V
--
V
Reverse Recovery Time
Reverse Recovery Charge
230
1.0
㎱
μC
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤1.9A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2007
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
9
VGS = 10V
6
VGS = 20V
3
* Note : TJ = 25oC
0
0
1
2
3
4
5
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
V
DS = 120V
DS = 300V
VDS = 480V
V
6
4
2
* Note : ID = 2.0A
6
0
0
2
4
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007
Typical Characteristics (continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
* Note :
1. VGS = 0 V
0.9
∗ Note :
1. VGS = 10 V
2. ID = 250 µA
2. ID = 0.95 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100 ms
DC
100
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
-1
10
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
* Notes :
0.2
1. ZθJC(t) = 2.87 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.1
0.05
-1
0.02
10
0.01
PDM
single pulse
t1
t2
-2
10
100
101
-5
10
-4
10
-3
10
-2
10
-1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Nov 2007
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,Nov 2007
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Nov 2007
Package Dimension
TO-252
±0.2
6.6
±0.1
2.3
±0.15
5.35
±0.05
0.5
±0.3
1.2
+0.1
-0.05
0.05
±0.2
±0.2
0.8
+0.1
-0.05
0.5
0.6
2.3typ
2.3typ
◎ SEMIHOW REV.A0,Nov 2007
Package Dimension
TO-251
±0.2
±0.1
6.6
2.3
±0.15
±0.05
5.35
0.5
±0.15
±0.15
0.75
0.8
+0.1
-0.05
0.5
±0.1
0.6
2.3typ
2.3typ
±0.3
1.2
◎ SEMIHOW REV.A0,Nov 2007
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