HFS10N65S [SEMIHOW]
650V N-Channel MOSFET; 650V N沟道MOSFET![HFS10N65S](http://pdffile.icpdf.com/pdf1/p00175/img/icpdf/HFS10_982596_icpdf.jpg)
型号: | HFS10N65S |
厂家: | ![]() |
描述: | 650V N-Channel MOSFET |
文件: | 总7页 (文件大小:899K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Sep 2009
BVDSS = 650 V
DS(on) typ = 0.83 Ω
R
HFS10N65S
650V N-Channel MOSFET
ID = 9.2 A
TO-220F
FEATURES
1
2
3
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 29 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
650
9.2*
5.5*
36.8*
±30
650
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
9.2
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
15.6
4.5
mJ
V/ns
Power Dissipation (TC = 25℃)
- Derate above 25℃
50
0.4
W
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
*Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
2.5
℃/W
Junction-to-Ambient
62.5
◎ SEMIHOW REV.A0,Sep 2009
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
1.0
V
RDS(ON) Static Drain-Source
On-Resistance
0.83
Ω
V
GS = 10 V, ID = 4.6 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
650
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to 25℃
DS = 650 V, VGS = 0 V
0.7
V/℃
/ΔTJ
Coefficient
IDSS
--
--
--
--
1
㎂
㎂
V
Zero Gate Voltage Drain Current
VDS = 520 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Input Capacitance
--
--
--
1450 1885
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
145
13
190
17
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Time
--
--
--
--
--
--
--
23
69
55
150
300
165
38
㎱
㎱
VDS = 325 V, ID = 9.2 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
144
77
㎱
(Note 4,5)
㎱
Qg
29
nC
nC
nC
VDS = 520V, ID = 9.2 A,
Qgs
Qgd
VGS = 10 V
6.8
10.3
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
9.2
36.8
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 9.2 A, VGS = 0 V
--
V
Reverse Recovery Time
Reverse Recovery Charge
420
4.2
㎱
μC
IS = 9.2 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.2A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤9.2A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Sep 2009
Typical Characteristics
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
V
GS = 10V
VGS = 20V
* Note : TJ = 25oC
30 35
0
5
10
15
20
25
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
3000
2500
2000
1500
1000
500
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 130V
VDS = 325V
C
VDS = 520V
C
iss
6
Coss
∗ Note ;
1. VGS = 0 V
4
2. f = 1 MHz
C
rss
2
* Note : ID = 9.2A
0
0
10
-1
100
101
0
4
8
12
16
20
24
28
32
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009
Typical Characteristics (continued)
2.5
2.0
1.5
1.0
0.5
0.0
∗ Note :
1. VGS = 10 V
2. ID = 4.6 A
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
10
8
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
101
10 ms
6
100 ms
100
DC
4
-1
10
* Notes :
1. TC = 25 o
2
C
2. TJ = 150 o
C
3. Single Pulse
-2
0
25
10
100
101
102
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
* Notes :
1. ZθJC(t) = 2.5 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.05
-1
10
0.02
0.01
PDM
single pulse
t1
-2
10
t2
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Sep 2009
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,Sep 2009
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Sep 2009
Package Dimension
TO-220F
±0.20
±0.20
±0.20
2.54
±0.20
0.70
±0.20
2.76
1.47max
±0.20
±0.20
0.50
0.80
2.54typ
2.54typ
◎ SEMIHOW REV.A0,Sep 2009
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