HFS12N65S [SEMIHOW]
650V N-Channel MOSFET; 650V N沟道MOSFET
| 型号： | HFS12N65S |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | 650V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：812K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Aug 2009
BVDSS = 650 V
DS(on) typ = 0.67 Ω
R
HFS12N65S
650V N-Channel MOSFET
ID = 12 A
TO-220F
FEATURES
1
2
3
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 38 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
650
12*
7.4*
48*
±30
860
12
ID
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
A
IDM
Drain Current
– Pulsed
(Note 1)
A
VGS
EAS
IAR
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
22.5
4.5
mJ
V/ns
Power Dissipation (TC = 25℃)
- Derate above 25℃
51
0.41
W
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
*Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Typ.
Max.
Units
Junction-to-Case
--
--
2.43
℃/W
Junction-to-Ambient
62.5
◎ SEMIHOW REV.A0,Aug 2009
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
V
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.0 A
0.67
0.78
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
650
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to 25℃
0.5
V/℃
/ΔTJ
Coefficient
IDSS
V
DS = 650 V, VGS = 0 V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
V
DS = 520 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
-100
Dynamic Characteristics
Ciss
Input Capacitance
--
--
--
1835 2385
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
185
16
240
21
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Time
--
--
--
--
--
--
--
30
85
140
90
38
8
70
180
280
190
49
㎱
㎱
VDS = 325 V, ID = 12 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
nC
nC
nC
VDS = 520V, ID = 12 A,
Qgs
Qgd
VGS = 10 V
--
(Note 4,5)
13
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
12
48
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 12.0 A, VGS = 0 V
--
V
Reverse Recovery Time
Reverse Recovery Charge
420
4.9
㎱
μC
IS = 12.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=11mH, IAS=12A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤12A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Aug 2009
Typical Characteristics
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
V
GS = 10V
VGS = 20V
* Note : TJ = 25oC
30 35
0
5
10
15
20
25
VSD, Source-Drain Voltage [V]
ID, Drain Current[A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 130V
VDS = 325V
VDS = 520V
C
C
iss
Coss
6
∗ Note ;
1. VGS = 0 V
4
C
2. f = 1 MHz
rss
2
* Note : ID = 12.0A
0
10
0
-1
100
101
0
4
8
12
16
20
24
28
32
36
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Aug 2009
Typical Characteristics (continued)
2.5
2.0
1.5
1.0
0.5
0.0
* Note:
1. VGS=10V
2. ID=6.0A
-100
-50
0
50
100
150
200
TJ, Junction Temperature[oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
14
12
10
8
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
101
1 ms
10 ms
100 ms
100
DC
6
4
-1
10
* Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
2
C
-2
10
0
25
100
101
102
103
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
* Notes :
1. ZθJC(t) = 2.43 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.05
-1
10
0.02
0.01
PDM
t1
single pulse
-2
10
t2
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Aug 2009
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,Aug 2009
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Aug 2009
Package Dimension
TO-220F
±0.20
±0.20
±0.20
20
±0.
8
2.54
3.1
±0.20
0.70
φ
±0.20
2.76
1.47max
±0.20
±0.20
0.50
0.80
2.54typ
2.54typ
◎ SEMIHOW REV.A0,Aug 2009
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