2N3499L [SEMICOA]
Type 2N3499L Geometry 5620 Polarity NPN; 键入2N3499L几何5620极性NPN
| 型号： | 2N3499L |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N3499L Geometry 5620 Polarity NPN |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N3499L
Ge ne ric Pa rt Numbe r:
2N3499
Type 2N3499L
Geometry 5620
Polarity NPN
Qual Level: JAN - JANTXV
REF: MIL-PRF-19500/366
Features:
·
General-purpose silicon transistor
for switching and amplifier appli-
cations.
·
·
Housed in TO-5 case.
Also available in chip form using
the 5620 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
TO-5
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
100
Unit
V
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, TA = 25oC
100
V
6.0
V
500
mA
mW
5.0
PD
Derate above 25oC
mW/oC
oC
28.8
TJ
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N3499L
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 µA
Symbol
Min
Max
Unit
V
(BR)CBO
100
---
V
Collector-Emitter Breakdown Voltage
IC = 10 mA
V
100
6.0
---
---
---
V
V
(BR)CEO
Emitter-Base Breakdown Voltage
IE = 10 µA
V
(BR)EBO
Collector-Base Cutoff Current
VCB = 50 V
ICBO
IEBO
50
nA
Emitter-Base Cutoff Current
VEB = 4 V
---
25
nA
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 100 µA, VCE = 10 V (pulsed)
hFE1
hFE2
hFE3
hFE4
hFE6
35
50
---
---
---
---
---
---
---
IC = 1.0 mA, VCE = 10 V (pulsed)
IC = 10 mA, VCE = 10 V (pulsed)
IC = 150 mA, VCE = 10 V (pulsed)
75
---
100
20
300
---
IC = 300 mA, VCE = 10 V (pulsed)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
VBE(sat)1
VBE(sat)3
---
---
0.8
1.4
V dc
V dc
IC = 300 mA, IB = 300 mA
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
VCE(sat)1
VCE(sat)3
---
---
0.2
0.6
V dc
V dc
IC = 300 mA, IB = 30 mA
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 1 kHz
Symbol
Min
Max
Unit
AC hFE
75
375
---
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
|hFE|
1.5
8.0
---
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
COBO
CIBO
NF
---
---
---
---
10
80
16
6.0
pF
pF
dB
dB
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
NF
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Switching Characteristics
Saturated Turn On Switching time to 90%
IC = 150 mA, IB1 = 15 mA, VEB = 2 V
Saturated Turn Off Switching time to 10%
IC = 150 mA, IB2 = -IB1 = 15 mA
Symbol
Min
Max
Unit
tON
---
115
ns
tOFF
---
1150
ns
相关型号：
2N3499LEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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