2N3499L_04 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N3499L_04 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3499L
Silicon NPN Transistor
Data Sheet
Description
Applications
• General purpose
• Low power
• NPN silicon transistor
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3499LJ)
• JANTX level (2N3499LJX)
• JANTXV level (2N3499LJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 5620
• Reference document:
MIL-PRF-19500/366
Benefits
• Qualification Levels: JAN, JANTX, and
Please contact Semicoa for special configurations
JANTXV
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
TC = 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Symbol
Rating
100
Unit
Volts
Volts
Collector-Emitter Voltage
VCEO
VCBO
Collector-Base Voltage
Emitter-Base Voltage
100
Volts
mA
VEBO
IC
6
Collector Current, Continuous
500
Power Dissipation, TA = 25OC
1
5.71
W
mW/°C
°C/W
PT
Derate linearly above 25OC
Thermal Resistance
175
RθJA
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa
Copyright© 2004
Rev. H.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3499L
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
Off Characteristics
characteristics specified at TA = 25°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 10 mA
100
VCB = 100 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
ICBO1
ICBO2
ICBO3
10
50
50
µA
nA
µA
µA
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEO
VCE = 80 Volts
1
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
25
µA
nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
IC = 10 mA, IB = 1 mA
IC = 300 mA, IB = 30 mA
IC = 10 mA, IB = 1 mA
IC = 300 mA, IB = 30 mA
hFE1
hFE2
hFE3
hFE4
hFE6
hFE7
35
50
75
100
20
45
DC Current Gain
300
VBEsat1
VBEsat3
VCEsat1
VCEsat3
0.8
1.4
0.2
0.6
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
VCE = 10 Volts, IC = 10 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
VCE = 10 Volts, IC = 0.5 mA,
f = 1 kHz, Rg = 1 kΩ
|hFE|
1.5
8
hFE
75
375
10
80
16
6
pF
pF
Open Circuit Output Capacitance
Open Circuit Input Capacitance
COBO
CIBO
NF1
Noise Figure
dB
VCE = 10 Volts, IC = 0.5 mA,
f = 10 kHz, Rg = 1 kΩ
NF2
Switching Characteristics
Saturated Turn-On Time
VEB = 5 Volts, IC = 150 mA,
IB1 = 15 mA
ns
ns
tON
115
Saturated Turn-Off Time
tOFF
IC = 150 mA, IB1=IB2=15 mA
1,150
Semicoa
Copyright© 2004
Rev. H.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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