2N3057A [SEMICOA]
Type 2N3057A Geometry 4500 Polarity NPN; 类型2N3057A几何4500极性NPN
| 型号： | 2N3057A |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N3057A Geometry 4500 Polarity NPN |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N3057A
Ge ne ric Pa rt Numbe r:
2N3057A
Type 2N3057A
Geometry 4500
Polarity NPN
Qual Level: JAN - JANS
REF: MIL-PRF-19500/391
Features:
·
General-purpose transistor for
switching and amplifier applica-
tons.
·
·
Housed in a TO-46 case.
Also available in chip form using
the 4500 chip geometry.
·
·
The Min and Max limits shown are
per MIL-PRF-19500/391 which
Semicoa meets in all cases.
Radiation Graphs available.
TO-46
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
80
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
140
V
7.0
V
1.0
mA
oC
TJ
-55 to +175
-55 to +175
oC
TSTG
Data Sheet No. 2N3057A
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 100 µA
Symbol
Min
Max
Unit
V(BR)CBO
140
---
V
Collector-Emitter Breakdown Voltage
IC = 30 mA
V(BR)CEO
V(BR)EBO
ICES
80
7.0
---
---
---
10
10
V
V
Emitter-Base Breakdown Voltage
IE = 100 µA
Collector-Emitter Cutoff Current
VCE = 90 V
nA
nA
Emitter-Base Cutoff Current
VEB = 5 V
IEBO
---
ON Characteristics
DC Current Gain
Symbol
Min
Max
Unit
IC = 150 mA, VCE = 10 V
hFE1
hFE2
hFE3
hFE4
hFE5
100
50
90
50
15
300
200
---
---
---
---
---
---
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V (pulse test)
IC = 500 mA, VCE = 10 V (pulse test)
IC = 1 A, VCE = 10 V (pulse test)
200
---
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VCE(sat)1
VCE(sat)2
---
---
0.2
0.5
V dc
V dc
VBE(sat)
---
1.1
V dc
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 5 V, f = 1 kHz
Symbol
Min
Max
Unit
AC hFE
80
400
---
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
|hFE|
5.0
20
---
VCE = 10 V, IC = 50 mA, f = 200 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz
Collecor-Base Time Constant
COBO
---
---
---
---
12
60
400
4
pF
pF
ps
dB
C
IBO
rb'CC
NF
VCE = 10 V, IC = 10 mA, f = 79.8 MHz
Noise Figure
VCE = 10 V, IC = 100 µA, Rg = 1 kOhm
Switching Characteristics
Pulse Response
Symbol
Min
Max
Unit
tON+ tOFF
---
30
ns
15 ns, 50 ohm input pulse
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