2N3057A_02 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N3057A_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3057A
Data Sheet
Description
Applications
• General purpose
• Low power
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3057AJ)
• JANTX level (2N3057AJX)
• JANTXV level (2N3057AJV)
• JANS level (2N3057AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-46 metal can
• Also available in chip configuration
• Chip geometry 4500
• Reference document:
MIL-PRF-19500/391
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Rating
Unit
Volts
Volts
Volts
VCEO
VCBO
VEBO
IC
80
140
7
Emitter-Base Voltage
Collector Current, Continuous
1
A
W
Power Dissipation, TA = 25OC
Derate linearly above 37.5OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
0.5
3.08
1.8
PT
PT
mW/°C
W
10.3
mW/°C
Thermal Resistance
325
°C/W
RθJA
TJ
Operating Junction Temperature
-65 to +200
°C
Storage Temperature
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3057A
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
V(BR)CEO IC = 30 mA
Test Conditions
Min
80
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
µA
nA
µA
µA
nA
ICBO1
ICES1
ICES2
IEBO1
IEBO2
VCB = 140 Volts
VCE = 90 Volts
CE = 90 Volts, TA = 150°C
10
10
10
10
10
V
VEB = 7 Volts
VEB = 5 Volts
Emitter-Base Cutoff Current
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 150 mA, VCE = 10 Volts
IC = 0.1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1 A, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
100
50
90
50
15
40
300
200
DC Current Gain
200
Volts
Volts
Base-Emitter Saturation Voltage
VBEsat
IC = 150 mA, IB = 15 mA
1.1
0.2
0.5
VCEsat1
IC = 150 mA, IB = 15 mA
Collector-Emitter Saturation Voltage
VCEsat2
IC = 500 mA, IB = 50 mA
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 10 Volts, IC = 50 mA,
|hFE|
5
20
f = 20 MHz
CE = 5 Volts, IC = 1 mA,
f = 1 kHz
V
hFE
80
400
12
V
CB = 10 Volts, IE = 0 mA,
pF
pF
ps
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Collector Base time constant
COBO
CIBO
rb’CC
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
60
V
CB = 10 Volts, IE = 10 mA,
400
4
f = 79.8 MHz
CE = 10 Volts, IC = 100 µA,
f = 200 Hz, Rg = 1 kΩ
V
Noise Figure
NF
dB
ns
Switching Characteristics
Saturated Turn-On Time
tON +tOFF
30
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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