BUY48 [SEME-LAB]
HIGH VOLTAGE, HIGH CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR; 高电压，大电流硅外延平面NPN晶体管
| 型号： | BUY48 |
| 厂家： | 
SEME LAB |
| 描述： | HIGH VOLTAGE, HIGH CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUY47
BUY48
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE, HIGH CURRENT
SILICON EXPITAXIAL PLANAR
NPN TRANSISTOR
8
.
8
9
(
0
.
3
5
)
9
.
4
0
(
0
.
3
7
)
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
5
.
0
8
(
0
.
2
0
0
)
t
y
p
.
APPLICATIONS
2
.
5
4
6
6
.
.
1
6
0
0
(
(
0
0
.
.
2
2
4
6
0
0
)
)
2
(
0
.
)
1
0
0
Intended for High Voltage, High Current,
Switching Applications up to 7A.
1
3
0
1
.
.
6
1
6
4
(
(
0
0
.
.
0
0
2
4
6
5
)
)
0
0
.
.
7
8
1
6
(
(
0
0
.
.
0
0
2
3
8
4
)
)
0
.
8
9
a
m
x
.
)
(
0
0
.
0
3
5
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
d
i
a
.
4
5
°
TO–39 PACKAGE
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BUY47
150V
BUY48
200V
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
(I = 0)
E
CBO
CEO
EBO
120V
170V
(I = 0)
B
6V
7A
(I = 0)
C
I
I
C
10A
1W
10W
Peak Collector Current (repetitive)
Total Power Dissipation
CM
P
@T
@T
25°C
50°C
tot
amb
case
–65 to +200°C
200°C
T
T
Storage Temperature Range
STG
Maximum Operating Junction Temperature
J
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/99
BUY48
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min. Typ. Max. Unit
V
= 80V
BUY47
10
A
mA
A
CB
I = 0
T = 125°C
1
E
C
I
Collector Cut-off Current
CBO
V
= 100V
BUY48
10
1
CB
I = 0
T = 125°C
mA
E
C
I = 1mA
BUY47
BUY48
BUY47
BUY48
150
200
120
170
6
C
V
Collector – Base Breakdown Voltage
V
(BR)CBO*
I = 0
E
I = 20mA
C
V
V
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
V
V
CEO(sus)*
I = 0
B
I = 1mA
I = 0
C
EBO*
E
I = 0.5A
I = 50mA
0.05
0.8
C
B
V
Collector – Emitter Saturation Voltage I = 2A
I = 0.2A
0.45
1
V
V
CE(sat)*
BE(sat)*
C
B
I = 5A
I = 0.5A
B
C
I = 0.5A
I = 50mA
B
C
V
Base – Emitter Saturation Voltage
DC Current Gain
I = 2A
I = 0.2A
1.1
1.5
C
B
I = 5A
I = 0.5A
B
C
I = 50mA
V
V
V
V
V
V
= 5V
= 5V
= 5V
= 5V
= 10V
= 50V
130
150
130
45
C
CE
CE
CE
CE
CE
CB
I = 0.5A
40
40
15
C
h
—
FE*
I = 2A
C
I = 5A
C
f
Transition Frequency
I = 100mA
90
MHz
pF
T
C
I = 0
E
C
Collector – Base Capacitance
45
80
CBO
f = 1MHz
t
t
Turn–On Time
Fall Time
I = 5A
V
= 40V
1
2
on
C
CC
s
I
= –I = 0.5A
B2
off
B1
NOTES
* Pulse Test: t = 300 s, = 1.5%
p
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/99
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