BUY49S [STMICROELECTRONICS]
SILICON NPN TRANSISTOR; 硅NPN晶体管
| 型号： | BUY49S |
| 厂家： | 
ST |
| 描述： | SILICON NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUY49S
SILICON NPN TRANSISTOR
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■
■
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
FAST SWITCHING SPEED
LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
GENERAL PURPOSE SWITCHING
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DESCRIPTION
The BUY49S is a silicon epitaxial planar NPN
transistor in jedec TO-39 package. It is used in
high-current switching applications up to 3 A.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
V
250
200
V
6
V
3
A
ICM
Collector Peak Current
5
10
A
o
Ptot
Total Power Dissipation at Tamb ≤ 25 C
Storage Temperature
W
oC
oC
Tstg
- 65 to 200
200
Tj
Max Operating Junction Temperature
1/4
June 1997
BUY49S
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-case-ambient
Max
Max
15
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0 )
VCB = 200 V
VCB = 200 V
0.1
50
µA
µA
Tcase = 150 oC
V(BR)CBO
*
Collector-Base
Breakdown Voltage
(IE = 0 )
IC = 100 µA
250
200
6
V
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 20 mA
V
VEBO
*
Emitter-base Voltage
(IC = 0)
IE = 1 mA
IC = 0.5 A
V
V
VCE(sat)
*
*
Collector-Emitter
Saturation Voltage
IB = 50 mA
IB = 50 mA
0.2
1.1
VBE(sat)
Collector-Emitter
IC = 0.5 A
V
Saturation Voltage
hFE
*
DC Current Gain
IC = 20 mA
IC = 0.5 A
VCE = 5 V
VCE = 5 V
VCE = 2 V
40
40
16
80
IC = 20 mA
Tcase = - 55 oC
fT
Transistor Frequency
IC = 100 mA
IE = 0
VCE = 10 V
VCB = 10 V
50
MHz
pF
CCBO
Collector-base
Capacitance
30
f
= 1 MHz
ton
toff
s/b**
Turn-on Time
Turn-off Time
IC = 0.5 A
VCC = 20 V
0.3
1
µs
µs
A
IB1 = - IB2 = 50 mA
VCE = 50 V
I
Second Breakdown
Collector Current
0.2
Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
Pulsed: 1 s, non repetitive pulse.
2/4
BUY49S
TO-39 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
MIN.
MAX.
A
B
D
E
F
G
H
I
12.7
0.500
0.49
6.6
0.019
0.260
0.334
0.370
8.5
9.4
5.08
0.200
1.2
0.9
0.047
0.035
L
45o (typ.)
D
A
G
I
H
L
P008B
3/4
BUY49S
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
相关型号：
BUY49SLEADFREE
Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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