2N5956 [SEME-LAB]

Bipolar PNP Device in a Hermetically sealed TO66; 在一个密封TO66双极PNP设备
2N5956
型号: 2N5956
厂家: SEME LAB    SEME LAB
描述:

Bipolar PNP Device in a Hermetically sealed TO66
在一个密封TO66双极PNP设备

晶体 晶体管 局域网
文件: 总1页 (文件大小:15K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N5956  
Dimensions in mm (inches).  
Bipolar PNP Device in a  
Hermetically sealed TO66  
Metal Package.  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
3.61 (0.142)  
4.08(0.161)  
rad.  
max.  
Bipolar PNP Device.  
VCEO = 45V  
1
2
IC = 6A  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO66 (TO213AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
45  
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
6
@ 4/3 (VCE / IC)  
20  
100  
-
ft  
5M  
Hz  
W
PD  
40  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
1-Aug-02  

相关型号:

2N5956E3

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
MICROSEMI

2N5956LEADFREE

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2
CENTRAL

2N5957

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AC
ETC

2N5957E3

暂无描述
MICROSEMI

2N5958

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI

2N5958E3

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI

2N5959

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AC
ETC

2N5959E3

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
MICROSEMI

2N5960

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin,
MICROSEMI

2N5961

NPN General Purpose Amplifier
FAIRCHILD

2N5961

NPN SILICON TRANSISTOR
CENTRAL

2N5961

60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
TI