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2N5956LEADFREE [CENTRAL]

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2;
2N5956LEADFREE
型号： 2N5956LEADFREE
厂家： CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述：

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2

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2N5954 2N5955 2N5956 PNP  
2N6372 2N6373 2N6374 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5954 and  
2N6372 SERIES types are complementary Silicon  
Power Transistors manufactured by the epitaxial base  
process, mounted in a hermetically sealed metal case  
designed for general purpose amplifier and switching  
applications.  
MARKING: FULL PART NUMBER  
TO-66 CASE  
2N5954  
2N6372  
90  
2N5955  
2N6373  
70  
2N5956  
2N6374  
50  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
CBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
90  
85  
80  
70  
50  
45  
40  
V
V
CEV  
CER  
CEO  
EBO  
V
65  
V
V
60  
5.0  
V
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
6.0  
A
C
I
2.0  
A
B
P
40  
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
4.3  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N5954  
2N6372  
2N5955  
2N6373  
2N5956  
2N6374  
SYMBOL  
TEST CONDITIONS  
MIN MAX MIN MAX  
MIN MAX  
UNITS  
μA  
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
=85V, V =1.5V, R =100Ω  
-
-
-
100  
-
-
-
-
CEV  
CEV  
CEV  
CEV  
CEV  
CEV  
CER  
CER  
CER  
CEO  
CEO  
CEO  
EBO  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
BE  
BE BE  
=65V, V =1.5V, R =100Ω  
BE BE  
-
-
100  
-
-
μA  
μA  
mA  
mA  
mA  
μA  
μA  
μA  
mA  
mA  
mA  
mA  
V
=45V, V =1.5V, R =100Ω  
-
-
-
-
100  
BE BE  
=85V, V =1.5V, R =100Ω, T =150°C -  
BE BE  
2.0  
-
-
-
-
C
=65V, V =1.5V, R =100Ω, T =150°C -  
-
-
2.0  
-
-
BE BE  
C
=45V, V =1.5V, R =100Ω, T =150°C -  
-
-
-
-
2.0  
BE BE  
C
=75V  
=55V  
=35V  
=65V  
=45V  
=25V  
=5.0V  
-
-
100  
-
-
-
-
-
-
100  
-
-
-
-
-
-
-
100  
-
1.0  
-
-
-
-
-
-
-
1.0  
-
-
1.0  
0.1  
-
-
-
0.1  
-
-
-
0.1  
-
-
-
-
-
BV  
BV  
BV  
I =100mA, V =1.5V, R =100Ω  
BE BE  
90  
85  
80  
70  
65  
60  
50  
45  
40  
CEV  
CER  
CEO  
C
I =100mA, R =100Ω  
-
-
-
V
C
BE  
I =100mA  
-
-
-
V
C
R1 (24-November 2010)  
2N5954 2N5955 2N5956 PNP  
2N6372 2N6373 2N6374 NPN  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)  
C
2N5954  
2N6372  
2N5955  
2N6373  
2N5956  
2N6374  
SYMBOL  
TEST CONDITIONS  
I =2.0A, I =200mA  
MIN MAX MIN MAX  
MIN MAX  
UNITS  
V
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
1.0  
-
-
-
-
-
-
-
-
-
-
-
1.0  
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.5A, I =250mA  
C
B
I =3.0A, I =300mA  
-
1.0  
2.0  
-
C
B
I =6.0A, I =1.2A (PNP types)  
2.0  
2.0  
-
2.0  
-
C
B
V
=4.0V, I =2.0A  
C
=4.0V, I =2.5A  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
V
V
V
V
V
V
2.0  
-
-
C
=4.0V, I =3.0A  
-
2.0  
3.0  
-
C
=4.0V, I =6.0A (NPN types)  
3.0  
3.0  
-
C
h
h
h
h
h
=4.0V, I =2.0A  
20 100  
C
=4.0V, I =2.5A  
-
-
-
-
-
-
-
-
20 100  
-
FE  
C
=4.0V, I =3.0A  
-
-
-
-
-
-
20 100  
FE  
C
=4.0V, I =6.0A  
5.0  
25  
5.0  
25  
5.0  
25  
-
-
-
-
FE  
C
=4.0V, I =0.5A, f=1.0kHz  
fe  
C
f
f
=4.0V, I =1.0A, f=1.0MHz (NPN types) 4.0  
4.0  
5.0  
4.0  
5.0  
MHz  
MHz  
T
C
=4.0V, I =1.0A, f=1.0MHz (PNP types) 5.0  
T
C
TO-66 CASE - MECHANICAL OUTLINE  
MARKING:  
FULL PART NUMBER  
R1 (24-November 2010)  
www.centralsemi.com  

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