2N5551CSM [SEME-LAB]
HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A; 高压NPN开关晶体管IN A
| 型号： | 2N5551CSM |
| 厂家： | 
SEME LAB |
| 描述： | HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5551CSM
HIGH VOLTAGE NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
0.51 0.10
(0.02 0.004)
0.31
(0.012)
FEATURES
rad.
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
3
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
2
1
• CECC SCREENING OPTIONS
1.91 0.10
(0.075 0.004)
A
0.31
rad.
(0.012)
3.05 0.13
(0.12 0.005)
1.40
APPLICATIONS:
Hermetically sealed surface mount 2N5551
(0.055)
1.02 0.10
(0.04 0.004)
max.
A =
for high reliability / space applications
requiring small size and low weight devices.
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base
PAD 2 – Emitter PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
180V
160V
CBO
CEO
EBO
6V
I
600mA
C
P
Total Device Dissipation @ T =25°C
350mW
0.2°C/mW
–55 to +150°C
D
A
Derate >25°C
T
, T
Operating and Storage Temperature Range
STG
J
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6528
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N5551CSM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Collector – Emitter Breakdown Voltage I = 1.0mA
Test Conditions
Min.
160
Typ.
Max. Unit
V
V
V
I = 0mA
V
(BR)CEO*
(BR)CBO
(BR)EBO
C
B
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
I = 100μA
I = 0mA
180
6
V
V
C
E
I = 10μA
I = 0mA
E
C
V
= 120V
I = 0
50
50
nA
μA
nA
CB
E
I
I
Collector – Base Cut-off Current
Emitter – Base Cut-off Current
CBO
EBO
T = +100°C
A
V
= 4V
I = 0
50
EB
C
I = 10mA
I = 1.0mA
0.15
0.20
1.0
1.0
C
B
V
V
Collector – Emitter Saturation Voltage
V
V
CE(sat)
BE(sat)
I = 50mA
I = 5mA
B
C
I = 10mA
I = 1.0mA
B
C
Base – Emitter Saturation Voltage
Current Gain
I = 50mA
I = 5mA
B
C
I = 1.0mA
V
V
V
V
= 5V
= 5V
= 5V
= 10V
80
80
30
C
CE
CE
CE
CE
h
f
I = 10mA
250
—
—
FE*
C
I = 50mA
C
I = 10mA
C
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
100
300
6
T
f = 100MHz
V
= 10V
I = 0
E
CB
C
obo
ib
f = 1.0 MHz
= 0.5V
pF
V
I = 0
C
EB
C
60
8
f = 1.0 MHz
I = 250μA
V
= 5V
CE
C
NF
dB
—
R =1.0 k
f = 1.0 KHz
I =1.0 mA
S
V
= 10V
CE
C
h
Current Gain
50
200
FE*
f = 1.0 KHz
* Pulse Test: t ≤ 300μs, δ ≤ 2%.
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6528
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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