2N5551CYTA [FAIRCHILD]
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;
| 型号： | 2N5551CYTA |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 晶体 放大器 晶体管 |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2006
2N5551- MMBT5551
tm
NPN General Purpose Amplifier
Features
•
•
•
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : I = 10mA, V = 5.0V)
C
CE
MMBT5551
2N5551
3
2
TO-92
SOT-23
1
Marking: 3S
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
160
Units
VCEO
Collector-Emitter Voltage
V
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
180
6.0
V
Collector current - Continuous
Junction and Storage Temperature
600
mA
°C
TJ, Tstg
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T =25°C unless otherwise noted
a
Max
Symbol
Parameter
Units
2N5551
*MMBT5551
PD
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
357
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
©2006 Fairchild Semiconductor Corporation
2N5551- MMBT5551 Rev. B
1
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Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 1.0mA, IB = 0
160
180
6.0
V
V
V
IC = 100µA, IE = 0
IE = 10uA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100°C
50
50
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
250
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
1.0
V
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 10V,
f = 100MHz
100
50
300
MHz
Cobo
Cibo
Hfe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
VCB = 10V, IE = 0, f = 1.0MHz
VBE = 0.5V, IC = 0, f = 1.0MHz
IC = 1.0 mA, VCE = 10 V, f = 1.0kHz
6.0
20
pF
pF
250
8.0
NF
IC = 250 uA, VCE = 5.0 V,
dB
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
2
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2N5551- MMBT5551 Rev. B
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
250
0.5
125 o
C
200
150
100
50
0.4
β
= 10
0.3
0.2
0.1
0.0
25 o
C
25 o
C
-40 o
C
125 o
C
VCE = 5V
- 40 o
C
0
0.1
0.2
0.5
1
2
5
10
20
50
100
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
1.0
- 40 o
C
1.0
β
= 10
- 40 oC
0.8
0.6
0.4
0.2
0.0
0.8
25 o
C
25 oC
0.6
125 o
C
125 oC
0.4
0.2
VCE = 5V
0.0
0.1
1
10
100
200
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltage
50
30
VCB = 100V
f = 1.0 MHz
25
20
15
10
C
ib
10
5
C
cb
1
25
0
0.1
50
75
100
125
1
10
100
T - AMBIENT TEMPERATURE ( C)
V
- COLLECTOR VOLTAGE (V)
°
A
CE
3
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2N5551- MMBT5551 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage Figure 8. Small Signal Current Gain
with Resistance Between Emitter-Base
vs Collector Current
260
240
220
200
180
160
16
12
8
FREG = 20 MHz
VCE = 10V
I
= 1.0 mA
C
4
F
E
0
0.1
1
10
100
1000
1
10
50
RESISTANCE (k
Ω
)
I C - COLLECTOR CURRENT (mA)
Figure 9. Power Dissipation
vs Ambient Temperature
700
600
500
400
300
200
100
0
TO-92
SOT-23
D
0
25
50
75
100
125
150
TEMPERATURE (oC)
4
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2N5551- MMBT5551 Rev. B
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WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner with-
out notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary
data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild Semi-
conductor reserves the right to make changes at any time
without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product that has
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
Rev. I19
5
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2N5551- MMBT5551 Rev. B
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