2N5058 [SEME-LAB]
NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR; NPN外延平面双极型晶体管
| 型号： | 2N5058 |
| 厂家： | 
SEME LAB |
| 描述： | NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5058
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
NPN EPITAXIAL PLANAR
BIPOLAR TRANSISTOR
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
FEATURES
0.89
(0.035)
max.
12.70
(0.500)
min.
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
0.41 (0.016)
0.53 (0.021)
dia.
• CECC SCREENING OPTIONS
5.08 (0.200)
typ.
• JAN LEVEL SCREENING OPTIONS
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
APPLICATIONS:
0.71 (0.028)
0.86 (0.034)
• General Purpose Amplifier
• High Voltage
45°
TO–39 (TO-205AD) PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
B
V
V
V
Collector – Emitter Voltage (I = 0)
300V
300V
CEO
CBO
EBO
Collector – Base Voltage (I = 0)
E
Emitter – Base Voltage (I = 0)
7V
C
I
Collector Current
150mA
C
P
Total Device Dissipation @ T = 25°C
1.0W
D
A
Derate above 25°C
6.67mW / °C
5.0W
P
Total Device Dissipation @ T = 25°C
D
C
Derate above 25°C
33.3mW / °C
–65 to +200°C
T , T
Operating and Storage Junction Temperature Range
J
STG
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5530
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N5058
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Collector – Emitter Breakdown Voltage I = 30mA
Test Conditions
Min.
300
300
7.0
Typ.
Max. Unit
V
V
V
*
I = 0
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
I = 100µA
I = 0
V
C
E
I = 100µA
I = 0
C
E
V
= 100V
0.05
µA
CB
I
I
Collector Cut-off Current
Emitter Cut-off Current
CBO
I = 0
T = +125°C
20
E
A
V
= 5V
I = 0
10
nA
EBO
BE
C
V
V
V
*
Collector – Emitter Saturation Voltage I = 30mA
I = 3mA
1.0
CE(sat)
C
B
*
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
I = 30mA
I = 3mA
0.85
0.82
BE(sat)
C
B
V
*
I = 30mA
V
V
V
= 25V
= 25V
= 25V
BE(on)
C
CE
CE
CE
I = 5mA
10
35
10
35
C
h
*
DC Current Gain
I = 30mA
150
FE
C
—
T = -55°C
A
I = 100mA
V
= 25V
CE
C
SMALL SIGNAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
30
Typ.
Typ.
Max. Unit
1
V
V
V
= 25V
I = 10mA
f = 20MHz
f = 1MHz
f = 1MHz
160
MHz
f
Transistion Frequency
Output Capacitance
Input Capacitance
CE
CB
BE
C
t
= 10V
I = 0
10
C
C
E
ob
pF
= 0.5V
I = 0
75
C
ib
THERMAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Min.
Max. Unit
30
R
R
Thermal Resistance Junction To Case
θJC
θJA
°C / W
150
Thermal Resistance Junction To Ambient
* Pulse Test: t ≤ 300ms, d ≤ 2%.
p
1) f is defined as the frequency at which |h | extrapolates to untity.
t
fe
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5530
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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