2N2880-220M [SEME-LAB]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | 2N2880-220M |
| 厂家： | 
SEME LAB |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2880-220M
MECHANICAL DATA
Dimensions in mm (inches)
NPN POWER
SILICON TRANSISTOR
FOR HI–REL
4.70
5.00
10.41
10.67
0.70
0.90
APPLICATIONS
3.56
3.81
Dia.
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
1 2 3
• ALL LEADS ISOLATED FROM CASE
• CECC, JAN AND SPACE LEVEL
SCREENING OPTIONS AVAILABLE
0.89
1.14
2.65
2.75
2.54
BSC
TO–220M (TO-257AB) – Metal Package
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
Collector – Base Maximum Voltage
Collector – Emitter Maximum Voltage
Emitter – Base Maximum Voltage
Maximum Continious Collector Current
Maximum Continious Base Current
110V
80V
CBO
CEO
EBO
8.0V
I
I
5.0A
C
500mA
B
P
Power Dissipation @ T = 100°C
20W
TOT
C
Linear Derating Factor > T = 100°C
0.2W/°C
–65°C to 200°C
5.0°C/W max.
C
T , T
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
J
stg
R
θJC
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5550
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N2880-220M
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ. Max. Unit
I
I
I
V
V
V
= 50V
= 80V
= 4V
I = 0
100
Collector – Emitter Cut-off Current
CEO
CBO
EBO
CE
CE
EB
B
µA
I = 0
0.2
0.2
Collector – Base Cut-off Current
Emitter – Base Cut-off Current
E
I = 0
C
V
V
V
V
I = 100mA
80
100
8.0
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Base – Emitter Breakdown Voltage
Base – Emitter Saturation Voltage
(BR)CEO
(BR)CEO
(BR)EBO
BE(sat)
C
V
I = 10µA
C
I = 10µA
E
I = 1.0A
I = 0.1A
1.2
0.25
2.0
C
B
I = 1.0A
I = 0.1A
B
C
V
h
Collector – Emitter Saturation Voltage
DC Current Gain
CE(sat)
I = 5.0A
I = 0.5A
B
C
I = 1.0A
V
V
V
= 5V
= 5V
= 10V
40
15
120
C
CE
CE
CE
—
FE
I = 0.5A
C
I = 1.0A
C
—
h
3.0
High Frequency Forward Current Gain
fe
f = 10MHz
f = 1MHz
pF
C
V
= 10V
150
0.3
Open Circuit Output Capacitance
Rise Time
obo
CB
t
I = 1.0A
r
C
µs
t
V
I
= 20V
CC
2.0
Storage Time
s
t
= 100mA
0.35
Fall Time
f
B1
*Pulsed : Pulse duration ≤ 300 µs , duty cycle ≤ 2.0%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5550
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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