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2N2880_1 [MICROSEMI]

NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
2N2880_1
型号： 2N2880_1
厂家： Microsemi    Microsemi
描述：

NPN POWER SILICON TRANSISTOR
NPN功率硅晶体管

晶体 晶体管
文件： 总2页 (文件大小：45K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/315  
Devices  
Qualified Level  
JAN  
2N2880  
2N3749  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol  
Value  
80  
110  
8.0  
0.5  
5.0  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
VCEO  
VCBO  
VEBO  
IB  
Collector Current  
IC  
@ TA = 250C (1)  
@ TC = 1000C (2)  
2.0  
30  
Total Power Dissipation  
W
PT  
-65 to +200  
0C  
Operating & Storage Junction Temperature Range  
Top,  
T
stg  
TO-59*  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
Unit  
0C/W  
3.33  
R
θJC  
1) Derate linearly 11.4 mW/0C for TA > 250C  
2) Derate linearly 300 mW/0C for TC > 1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 10 µAdc  
Emitter-Base Breakdown to Voltage  
IE = 10 µAdc  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
Collector-Emitter Cutoff Current  
VCE = 110 Vdc, VBE = -0.5  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
80  
110  
8.0  
Vdc  
Vdc  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICEO  
Vdc  
20  
0.2  
1.0  
0.2  
µAdc  
µAdc  
µAdc  
µAdc  
ICBO  
ICEX  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978)620-2600 / Fax: (978) 689-0803  
111604  
Page 1 of 2  
2N2880, 2N3749 JAN SERIES  
ELECTRICAL CHARACTERISTICS (Con’t)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
ON CHARACTERISTICS  
Forward-Current Transfer Ratio  
IC = 50 mAdc, VCE = 5.0 Vdc  
IC = 1.0 Adc, VCE = 2.0 Vdc  
IC = 5.0 Adc, VCE = 5.0 Vdc  
Base-Emitter Voltage Non-Saturated  
VCE = 2.0 Adc, IC =1.0 Adc  
Collector-Emitter Saturation Voltage  
IC = 1.0 Adc, IB = 0.1 Adc  
120  
120  
40  
40  
15  
hFE  
VBE  
1.2  
Vdc  
Vdc  
0.25  
1.5  
VCE(sat)  
IC = 5.0 Adc, IB = 0.5 Adc  
Base-Emitter Saturation Voltage  
IC = 1.0 Adc, IB = 0.1 Adc  
VBE(sat)  
1.2  
12  
Vdc  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
IC = 50 mAdc, VCE = 5.0 Vdc, f = 1 kHz  
Output Capacitance  
3.0  
40  
⏐hfe⏐  
hfe  
140  
150  
pF  
Cobo  
VCB = 10 Vdc, IE = 0, 100 ≤ f ≤ 1.0 MHz  
SAFE OPERATING AREA  
DC Tests  
TC = 1000C, t = 10 s  
Test 1  
VCE = 80 Vdc, IC = 80 mAdc  
Test 2  
VCE = 20 Vdc, IC = 1.5 Adc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
111604  
Page 2 of 2  

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