MMBD318C [SECOS]
Surface Mount High Votlage Switching Diode; 表面贴装高Votlage开关二极管
| 型号： | MMBD318C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Surface Mount High Votlage Switching Diode |
| 文件： | 总2页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD318 Series
MMBD318/MMBD318A/MMBD318C/MMBD318S
Elektronische Bauelemente
Surface Mount High Votlage Switching Diode
A suffix of "-C" specifies halogen & lead-free
FEATURES
SC-59
Min
RoHS Compliant Product
High Reverse Breakdown Voltage
Ultra high speed Switching
High Conductance
•
Dim
A
B
C
D
G
H
J
Max
A
2.700 3.100
1.400 1.600
1.000 1.400
0.350 0.500
1.800 2.000
0.000 0.100
0.085 0.177
0.400 0.600
0.850 1.150
2.400 2.800
0.450 0.550
L
S
C
Top View
B
MECHANICAL DATA
V
G
Case: SC59, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
K
L
H
J
D
K
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
S
3
V
All Dimension in mm
1
2
3
3
3
3
1
2
1
2
1
1
2
2
MMBD318 Marking: LD6
MMBD318A Marking: LD7
MMBD318C Marking: LD8
MMBD318S Marking: LD9
Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Parameter
Max.Repetitive Peak Reverse Voltage
Max.RMS Voltage
Symbol
Ratings
350
212
300
225
5.0
Unit
V
V
RRM
V
V
RMS
Max. DC Blocking Voltage
V
V
DC
Max. Average Forward Rectified Current
Typical Junction Capacitance between Terminal (Note 1)
Max. Reverse Recovery Time (Note2)
I
mA
pF
ns
o
C
j
T
rr
50
Non-Repetive Peak Forward surge Current @Tp=1.0us
@Tp= 1.0s
4
1
I
A
FSM
Power Dissipation
P
D
mW
350
Thermal Resistance Junction to Ambient Air
Operation and Storage Temperature Range
Rθ
357
°C
/W
JA
T ,T
-60~+150
°C
STG
j
Electrical Characteristics (AT TA = 25°C unless otherwise noted)
Max.
Characteristics
Min.
Symbol
Unit
V
Reverse Breakdown Voltage. IR=150uA
V
R
350
-
nA
100
100
1.0
Average Reverse Current.
VR=240V, TA=25
°C
-
-
-
I
R
VR=240V, TA=150
°C
uA
V
V
Forward Voltage
F
Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage
Ω
2. Measured at applied forware current of 30mA, RL=100 and recovery to IRR=-3mA
3. ESD sensitive product handling required.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
MMBD318 Series
MMBD318/MMBD318A/MMBD318C/MMBD318S
Elektronische Bauelemente
Surface Mount High Votlage Switching Diode
1000
500
100
400
300
200
Tj = 150°C
10
Tj = 25°C
1.0
0.1
100
0
0.01
0
1600
2000
400
800
1200
100
0
200
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics, per element
TA, AMBIENT TEMPERATURE, (°C)
Fig. 1 Power Derating Curve, total package
1.1
1.0
1000
Tj = 150°C
100
10
Tj = 75°C
0.9
1.0
0.1
Tj = 25°C
0.8
0.7
0.01
0.001
100
0.1
10
0.01
1.0
0
100
150
300 350
50
200 250
VR, REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics, per element
Fig. 4 Typical Total Capacitance
ge, per element
vs. Reverse Volta
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
相关型号：
MMBD330-T1-LF
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
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