MMBD330T1 [MOTOROLA]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | MMBD330T1 |
| 厂家： | 
MOTOROLA |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总8页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BY MMBD110T1/D
SEMICONDUCTOR TECHNICAL DATA
Schottky barrier diodes are designed primarily for high–efficiency UHF and
VHF detector applications. Readily available to many other fast switching RF
and digital applications. They are housed in the SOT–323/SC–70 package
which is designed for low–power surface mount applications.
3
•
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
1
2
CASE 419A–02, STYLE 2
SOT-323/SC–70
Low Reverse Leakage
Available in 8 mm Tape and Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD110T1
MMBD330T1
MMBD770T1
V
R
7.0
30
70
Vdc
Forward Power Dissipation
P
T
120
mW
F
T
A
= 25°C
Junction Temperature
–55 to +125
–55 to +150
°C
°C
J
Storage Temperature Range
T
stg
DEVICE MARKING
MMBD110T1 = 4M
MMBD330T1 = 4T
MMBD770T1 = 5H
Thermal Clad is a registered trademark of the Bergquist Company.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
Volts
(BR)R
(I = 10 µA)
R
MMBD110T1
MMBD330T1
MMBD770T1
7.0
30
70
10
—
—
—
—
—
Diode Capacitance
C
pF
T
(V = 0, f = 1.0 MHZ, Note 1)
MMBD110T1
MMBD330T1
MMBD770T1
—
—
—
0.88
0.9
0.5
1.0
1.5
1.0
R
(V = 15 Volts, f = 1.0 MHZ)
R
(V = 20 Volts, f = 1.0 MHZ)
R
Reverse Leakage
I
R
nAdc
(V = 3.0 V)
MMBD110T1
MMBD330T1
MMBD770T1
—
—
—
20
13
9.0
250
200
200
R
(V = 25 V)
R
(V = 35 V)
R
Noise Figure
NF
dB
(f = 1.0 GHz, Note 2)
MMBD110T1
—
6.0
—
Forward Voltage
V
F
Vdc
(I = 10 mA)
MMBD110T1
MMBD330T1
—
—
—
—
—
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
F
(I = 1.0 mAdc)
F
(I = 10 mA)
F
(I = 1.0 mAdc)
MMBD770T1
F
(I = 10 mA)
F
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MMBD110T1
1.0
0.7
0.5
100
V
= 3.0 Vdc
R
10
0.2
T
= 85°C
T
= –40°C
A
A
0.1
0.07
0.05
1.0
0.1
T
= 25°C
A
0.02
0.01
MMBD110T1
MMBD110T1
0.7
30
40
50
60
70
80
90
100 110 120
130
0.3
0.4
0.5
0.6
0.8
T , AMBIENT TEMPERATURE (°C)
V , FORWARD VOLTAGE (VOLTS)
A
F
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
0.9
11
10
9
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
8
7
0.8
6
5
4
0.7
0.6
3
2
1
MMBD110T1
MMBD110T1
0
1.0
2.0
3.0
4.0
0.1
0.2
0.5
1.0
2.0
5.0
10
V
, REVERSE VOLTAGE (VOLTS)
P
, LOCAL OSCILLATOR POWER (mW)
R
LO
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS
Note1—C andC aremeasuredusingacapacitancebridge
C
T
(Boonton Electronics Model 75A or equivalent).
Note2—Noisefiguremeasuredwithdiodeundertestintuned
diodemountusingUHFnoisesourceandlocaloscil-
lator(LO)frequencyof1.0GHz.TheLOpowerisad-
justed for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30
MHz, see Figure 5.
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL CHARACTERISTICS
MMBD330T1
2.8
2.4
2.0
1.6
1.2
500
MMBD330T1
MMBD330T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90 100
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD CURRENT (mA)
R
F
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
10
100
10
MMBD330T1
= 100°C
MMBD330T1
T
A
1.0
T
= –40°C
A
T
= 85°C
A
T
= 75°C
A
0.1
1.0
0.1
T
= 25
°C
A
T
= 25
°C
A
0.01
0.001
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V
, REVERSE VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
F
R
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MMBD770T1
2.0
1.6
500
MMBD770T1
MMBD770T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90 100
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD CURRENT (mA)
R
F
Figure 10. Total Capacitance
Figure 11. Minority Carrier Lifetime
10
100
10
MMBD770T1
= 100°C
MMBD770T1
T
A
1.0
T
= 85°C
T
= –40°C
A
A
T
= 75°C
A
0.1
1.0
0.1
T
= 25°C
0.01
A
T
= 25
°C
A
0.001
0
10
20
30
40
50
0.2
0.4
0.8
1.2
1.6
2.0
V
, REVERSE VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
R
F
Figure 12. Reverse Leakage
Figure 13. Forward Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SOT–323/SC–70
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
SOLDERING PRECAUTIONS
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–323/SC–70
package, P can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 150 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
833°C/W
P
=
= 150 milliwatts
D
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70 package.
Another alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a board
material such as Thermal Clad, an aluminum core board, the
power dissipation can be doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
NOTES:
L
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MILLIMETERS
B
S
DIM
A
B
C
D
G
H
J
MIN
MAX
0.087
0.053
0.049
0.016
0.055
0.004
0.010
MIN
1.80
1.15
0.90
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.25
0.40
1.40
0.10
0.25
1
2
0.071
0.045
0.035
0.012
0.047
0.000
0.004
D
V
G
K
L
N
R
S
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
R
J
0.031
0.079
0.012
0.039
0.087
0.016
0.80
2.00
0.30
1.00
2.20
0.40
N
C
V
0.05 (0.002)
K
H
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
CASE 419–02
ISSUE G
SOT–323/SC–70
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MMBD110T1/D
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