2SC2883 [SECOS]

NPN Plastic-Encapsulate Transistor; NPN塑封装晶体管
2SC2883
型号: 2SC2883
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Plastic-Encapsulate Transistor
NPN塑封装晶体管

晶体 晶体管
文件: 总3页 (文件大小:365K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC2883  
1.5 A , 30 V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-89  
Low Voltage.  
4
1
2
CLASSIFICATION OF hFE  
3
A
E
C
Product-Rank  
2SC2883-O  
2SC2883-Y  
160~320  
GY  
Range  
100~200  
GO  
B
D
Marking  
F
G
H
K
J
L
PACKAGE INFORMATION  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
Package  
MPQ  
LeaderSize  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
4.60  
4.25  
1.60  
2.60  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
SOT-89  
1K  
7’ inch  
K
0.32  
0.35  
0.52  
0.44  
E
F
1.50  
0.89  
1.70  
1.20  
L
Collector  
  
  
Base  
  
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
30  
V
V
30  
5
1.5  
V
Continuous Collector Current  
Collector Power Dissipation  
Junction, Storage Temperature  
A
PC  
500  
mW  
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
-
-
-
V
V
IC=1mA, IE=0  
30  
-
IC=10mA, IB=0  
IE=1mA, IC=0  
5
-
-
V
-
-
0.1  
0.1  
320  
2
μA  
μA  
VCB=30V, IE=0  
VEB=5V, IC=0  
Emitter Cut-Off Current  
IEBO  
-
-
DC Current Gain  
hFE  
100  
-
VCE=2V, IC=500mA  
IC=1.5A, IB=30mA  
VCE=2V, IC=500mA  
Collector to Emitter Saturation Voltage  
Base to emitter Voltage  
VCE(sat)  
VBE  
-
-
-
-
-
V
V
-
120  
-
1
Transition Frequency  
fT  
-
MHz VCE=2V, IC = 500mA  
pF VCB=10V, IE=0, f=1MHz  
Collector Output Capacitance  
Cob  
40  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-Jan-2010 Rev. A  
Page 1 of 3  
2SC2883  
1.5 A , 30 V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVE  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-Jan-2010 Rev. A  
Page 2 of 3  
2SC2883  
1.5 A , 30 V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVE  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-Jan-2010 Rev. A  
Page 3 of 3  

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