2SC2883-O [TOSHIBA]
TRANSISTOR 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 2SC2883-O |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal 放大器 晶体管 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2883
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2883
Audio Frequency Amplifier Applications
Unit: mm
•
•
•
•
Suitable for output stage of 3 watts amplifier
Small flat package
= 1.0 to 2.0 W (mounted on a ceramic substrate)
P
C
Complementary to 2SA1203
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
30
30
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
5
I
1.5
0.3
500
C
Base current
I
B
P
P
C
C
Collector power dissipation
mW
PW-MINI
JEDEC
1000
(Note 1)
―
Junction temperature
T
150
°C
°C
j
JEITA
SC-62
2-5K1A
Storage temperature range
T
stg
−55 to 150
TOSHIBA
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Weight: 0.05 g (typ.)
1
2004-07-07
2SC2883
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 30 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
30
5
―
―
―
―
0.1
0.1
―
µA
µA
V
CBO
CB
E
Emitter cut-off current
= 5 V, I = 0
C
EBO
EB
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
I
= 10 mA, I = 0
B
(BR) CEO
(BR) EBO
C
E
I
= 1 mA, I = 0
―
V
C
h
FE
DC current gain
V
= 2 V, I = 500 mA
100
―
320
―
CE
C
(Note 2)
CE (sat)
Collector-emitter saturation voltage
Base-emitter voltage
V
I
C
= 1.5 A, I = 0.03 A
―
―
―
―
―
―
2.0
1.0
―
V
V
B
V
V
CE
V
CE
V
CB
= 2 V, I = 500 mA
C
BE
Transition frequency
f
= 2 V, I = 500 mA
120
―
MHz
pF
T
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
40
ob
E
Note 2:
h
FE
classification O: 100 to 200, Y: 160 to 320
Marking
Part No. (or abbreviation code)
Characteristics indicator
G
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
2
2004-07-07
2SC2883
I
– V
h – I
FE C
C
CE
1.6
1.2
0.8
0.4
0
1000
10
8
Common emitter
500
300
6
5
4
3
2
Ta = 25°C
Ta = 100°C
25
−25
100
50
30
I
B
= 1 mA
Common emitter
= 2 V
V
CE
0
8
10
1
0
4
12
16
3
10
30
100
300
(mA)
1000
Collector current
I
C
Collector-emitter voltage
V
(V)
CE
V
– I
C
I – V
C BE
CE (sat)
1
1.6
1.2
0.8
0.4
0
Common emitter
Common emitter
V = 2 V
CE
I
C
/I = 50
B
0.5
0.3
Ta = 100°C 25
−25
0.1
Ta = 100°C
0.05
0.03
25
−25
0.01
0
0.4
0.8
1.2
(V)
1.6
1
3
10
30
100
300
1000
Base-emitter voltage
V
BE
Collector current
I
C
(mA)
Safe Operating Area
5000
3000
P
– Ta
C
I
max (pulse)*
C
1.2
1.0
0.8
0.6
0.4
0.2
0
1 ms*
I
max (continuous)
10 ms*
C
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
(1)
(2)
1000
100 ms*
500
300
DC operation Ta = 25°C
1 s*
100
*: Single nonrepetitive pulse
Ta = 25°C
50
30
Curves must be derated
linearly with increase in
temperature.
10
5
Tested without a substrate.
V
max
CEO
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
(V)
Ambient temperature Ta (°C)
CE
3
2004-07-07
2SC2883
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
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