2SC2715 [SECOS]
NPN Plastic-Encapsulate Transistor; NPN塑封装晶体管
| 型号： | 2SC2715 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic-Encapsulate Transistor |
| 文件： | 总4页 (文件大小：908K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV.
IF Stage.
A
L
3
3
Top View
C B
1
1
2
CLASSIFICATION OF hFE
2
K
F
E
Product-Rank 2SC2715-R
2SC2715-O
70~140
RO1
2SC2715-Y
120~240
RY1
D
Range
40~80
RR1
H
J
G
Marking
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.04
2.55
1.40
1.15
2.04
0.50
Min.
Max.
PACKAGE INFORMATION
A
B
C
D
E
F
2.80
2.10
1.20
0.89
1.78
0.30
G
H
J
K
L
0.09
0.45
0.08
0.18
0.60
0.177
Package
MPQ
LeaderSize
7’ inch
0.6 REF.
SOT-23
3K
0.89
1.02
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
35
V
V
Collector to Emitter Voltage
Emitter to Base Voltage
30
4
50
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
mA
mW
°C
PC
350
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
35
30
4
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=10μA, IE=0
IC=1mA, IB=0
-
V
IE=10μA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
-
0.1
0.1
240
0.4
1
μA
μA
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE
40
-
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
V
V
-
100
27
400
33
MHz VCE=10V, IC=1mA
dB VCE=6V, IC=1mA, f=10.7MHz
Power Gain
Gpe
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 1 of 4
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 2 of 4
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 3 of 4
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 4 of 4
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