2SC2715M [JCST]

TRANSISTOR; 晶体管
2SC2715M
型号: 2SC2715M
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

TRANSISTOR
晶体管

晶体 晶体管
文件: 总3页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
WBFBP-03B Plastic-Encapsulate Transistors  
C
WBFBP-03B  
2SC2715M TRANSISTOR  
(1.2×1.2×0.5)  
unit: mm  
TOP  
DESCRIPTION  
NPN Epitaxial planar Silicon Transistor  
B
E
B
C
1. BASE  
FEATURES  
2. EMITTER  
3. COLLECTOR  
High power gain: Gpe=27dB(f=10.7MHz)  
Recommended for FM IF,OSC Stage and AM CONV.IF Stage  
BACK  
E
APPLICATION  
High Frequency amplifier  
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,  
DVD-ROM, Note book PC, etc.)  
MARKING: RR,RO,RY  
C
RR  
B E  
AXIMUM RATINGS* TA=25unless otherwise noted  
Symbol  
Parameter  
Value  
35  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
4
V
Collector Current -Continuous  
Collector Dissipation  
50  
mA  
mW  
PC  
150  
150  
-55-150  
TJ  
Junction Temperature  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
V
IC=10µA, IE=0  
IC=1mA, IB=0  
IE=10µA, IC=0  
VCB=35V, IE=0  
VEB=4V, IC=0  
VCE=12V, IC=2mA  
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
VCE=10V, IC=1mA  
VCB=10V, IE=0, f=1MHZ  
35  
30  
4
V
µA  
µA  
0.1  
0.1  
240  
0.4  
1
400  
3.2  
50  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
40  
100  
27  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
MHz  
pF  
ps  
Collector output capacitance  
Collector- Base time constant  
Power Gain  
Cob  
Cc.rbb’ VCE=10V, IC=1mA, f=30MHZ  
Gp  
33  
dB  
VCE=6V, IC=1mA, f=10.7MHZ  
CLASSIFICATION OF hFE  
Rank  
R
O
Y
40-80  
RR  
70-140  
RO  
120-240  
RY  
Range  
Marking  
Typical Characteristics  
2SC2715M  
D im e n s io n s In M illim e te r s  
D im e n s io n s In In c h e s  
S y m b o l  
M in .  
0 .4 5 0  
0 .0 1 0  
0 .1 7 0  
0 .2 7 0  
M a x .  
0 .5 5 0  
0 .0 9 0  
0 .2 7 0  
0 .3 7 0  
M in .  
0 .0 1 8  
0 .0 0 0  
0 .0 0 7  
0 .0 1 1  
M a x .  
0 .0 2 2  
0 .0 0 4  
0 .0 1 1  
0 .0 1 5  
A
A 1  
b
b 1  
b 2  
D
0 .2 5 0 R E F .  
0 .0 1 0 R E F .  
1 .1 5 0  
1 .1 5 0  
1 .2 5 0  
1 .2 5 0  
0 .0 4 5  
0 .0 4 5  
0 .0 4 9  
0 .0 4 9  
E
D 2  
E 2  
e
0 .4 7 0 R E F .  
0 .8 1 0 R E F .  
0 .8 0 0 T Y P .  
0 .2 8 0 R E F .  
0 .2 3 0 R E F .  
0 .1 5 0 R E F .  
0 .3 0 0 R E F .  
0 .0 9 0 R E F .  
0 .0 0 2 R E F .  
0 .0 3 2 R E F .  
0 .0 3 2 T Y P .  
0 .0 1 1 R E F .  
0 .0 0 9 R E F .  
0 .0 0 6 R E F .  
0 .0 1 2 R E F .  
0 .0 0 4 R E F .  
L
L 1  
L 2  
k
z

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