BDW52C [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BDW52C |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDW52C
DESCRIPTION
·With TO-3 package
·Complement to type BDW51C
·Excellent safe operating area
APPLICATIONS
·For use in power linear and
switching applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-100
-100
-5
UNIT
V
Open base
V
Open collector
V
-15
A
ICM
Collector current-peak
Base current
-20
A
IB
-7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
125
W
ꢀ
Tj
200
Tstg
-65~200
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.4
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDW52C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=-0.1A ;IB=0
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
Collector-emitter saturation voltage IC=-10A; IB=-2.5A
-100
-1.0
-3.0
-2.5
-1.5
-1.0
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-10A; IB=-2.5A
IC=-5A ; VCE=-4V
VCE=-50V; IB=0
V
V
ICEO
mA
mA
mA
V
CB=-100V; IE=0
-0.5
-5.0
ICBO
TC=150ꢀ
IEBO
VEB=-5V; IC=0
-2.0
150
hFE-1
IC=-5A ; VCE=-4V
IC=-10A ; VCE=-4V
IC=-0.5A ; VCE=-4V
20
5
hFE-2
DC current gain
fT
Transition frequency
3
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDW52C
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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