BDW53B [POINN]
NPN SILICON POWER DARLINGTONS; NPN硅功率DARLINGTONS
| 型号： | BDW53B |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON POWER DARLINGTONS |
| 文件： | 总6页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
●
Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
TO-220 PACKAGE
(TOP VIEW)
●
●
●
40 W at 25°C Case Temperature
4 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3 V, 1.5 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW53
45
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
60
Collector-base voltage (IE = 0)
VCBO
80
V
100
120
45
BDW53A
BDW53B
BDW53C
BDW53D
60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
80
V
100
120
Emitter-base voltage
VEBO
IC
5
V
A
Continuous collector current
4
Continuous base current
IB
50
40
mA
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Ptot
Ptot
2
W
2
½LIC
25
mJ
°C
°C
°C
Tj
Tstg
TA
-65 to +150
-65 to +150
-65 to +150
Operating temperature range
Operating free-air temperature range
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDW53
45
60
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
Collector-emitter
V(BR)CEO
IC
=
30 mA
IB = 0
(see Note 5)
80
V
breakdown voltage
100
120
VCE
VCE
VCE
VCE
VCE
VCB
VCB
VCB
=
30 V
30 V
40 V
50 V
60 V
45 V
60 V
80 V
I
B = 0
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
=
=
=
=
=
=
=
IB = 0
IB = 0
IB = 0
IB = 0
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
Collector-emitter
cut-off current
ICEO
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
VCB = 100 V
VCB = 120 V
Collector cut-off
current
ICBO
mA
mA
VCB
VCB
VCB
=
=
=
45 V
60 V
80 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW53A
BDW53B
BDW53C
BDW53D
5
5
VCB = 100 V
VCB = 120 V
5
5
Emitter cut-off
current
IEBO
hFE
VEB
=
5 V
IC = 0
2
Forward current
transfer ratio
Base-emitter
voltage
VCE
VCE
=
=
3 V
3 V
IC = 1.5 A
750
100
20000
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
IC 4 A
=
VBE(on)
VCE(sat)
VEC
VCE
=
3 V
IC = 1.5 A
2.5
V
V
V
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IB
IB
=
=
30 mA
40 mA
IC = 1.5 A
2.5
4
IC 4 A
=
IE
=
4 A
IB = 0
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
3.125
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = 8 mA
RL = 15 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 2 A
I
IB(off) = -8 mA
1
µs
µs
VBE(off) = -5 V
tp = 20 ms, dc £ 2%
4.5
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS110AB
TCS110AD
20000
10000
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
1·5
1·0
0·5
1000
TC = -40°C
TC = 25°C
VCE
=
3 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
0·5
0
0·5
1·0
5·0
1·0
5·0
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS110AC
10
1·0
0·1
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AB
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
5
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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