2SD850 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD850 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD850
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
1500
700
V
Open collector
5
V
3
5
A
ICM
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
A
PT
TC=90ꢀ
25
W
ꢀ
Tj
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD850
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
PARAMETER
CONDITIONS
MIN
600
5
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; IB=0
V
V
Emitter-base breakdown votage
IE=10mA; IC=0
Collector-emitter saturation voltage IC=2.5 A;IB=0.8A
4.0
1.5
50
V
VBEsat
Base-emitter saturation voltage
Collector cut-off current
IC=2.5 A;IB=0.8A
VCB=750V;IE=0
V
µA
mA
ICBO
VCB=1500V;IE=0
IC=0.5A ; VCE=5V
IC=2.5A ; VCE=10V
1.0
hFE-1
hFE-2
tf
DC current gain
DC current gain
Fall time
8
4
15
1.0
µs
µs
IC=2.5A;IB =0.8A;LB=5µH
end
ts
Storage time
13
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD850
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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