2SD855O [ISC]
Transistor;
| 型号： | 2SD855O |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD855
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SB760
APPLICATIONS
·Medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
60
60
V
5
V
Collector Current-Continuous
Collector Current-Peak
1
2
A
ICM
A
Collector Power Dissipation
@ TC=25℃
PC
30
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD855
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 30mA; IB= 0
60
V
IC= 1A; IB= 0.125A
IC= 1A; VCE= 4V
VCE= 60V; IB= 0
VCE= 80V; IE= 0
VEB= 5V; IC= 0
1.0
1.3
300
200
1
V
VCE
(sat)
V
VBE(
)
on
ICEO
μA
μA
mA
ICES
IEBO
hFE-1
DC Current Gain
IC= 0.2A; VCE= 4V
IC= 1A; VCE= 4V
40
15
450
hFE-2
DC Current Gain
hFE-1 Classifications
R
Q
P
O
40-90
70-150
120-250 200-450
2
isc Website：www.iscsemi.cn
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