2SD612 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD612
型号: 2SD612
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:163K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD612 2SD612K  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2SB632/632K  
·High collector dissipation  
·Wide area of safe operation  
APPLICATIONS  
·25V/35V, 2A low-frequency power  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD612  
2SD612K  
2SD612  
2SD612K  
25  
VCBO  
Collector-base voltage  
Open emitter  
V
35  
25  
VCEO  
Collector-emitter voltage  
Open base  
V
35  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-peak  
Open collector  
5
V
A
A
2
ICM  
3
1
Ta=25ꢀ  
TC=25ꢀ  
PD  
Total power dissipation  
W
10  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD612 2SD612K  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
25  
35  
25  
35  
5
TYP.  
MAX  
UNIT  
2SD612  
2SD612K  
2SD612  
2SD612K  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=1mA; RBE=  
V
Collector-base  
breakdown voltage  
V(BR)CBO  
IC=10µA ;IE=0  
IE=10µA ;IC=0  
V
V(BR)EBO  
VCEsat  
VBEsat  
ICBO  
Emitter-base breakdown voltage  
V
V
Collector-emitter saturation voltage IC=1.5A ;IB=0.15A  
0.3  
1.1  
0.8  
1.5  
1
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=1.5A ;IB=0.15A  
VCB=20V; IE=0  
V
µA  
µA  
IEBO  
VEB=4V; IC=0  
1
hFE-1  
hFE-2  
fT  
IC=0.5A ; VCE=2V  
IC=1.5A ; VCE=2V  
IC=50mA ; VCE=10V  
f=1MHz ; VCB=10V  
60  
30  
320  
DC current gain  
Transition frequency  
Collector output capacitance  
100  
30  
MHz  
pF  
COB  
Switching times  
ton Turn-on time  
tf  
0.05  
0.10  
0.40  
µs  
µs  
µs  
IC=500mA ; VCE=12V  
IB1=-IB2=50mA  
Fall time  
tstg  
Storage time  
hFE-1 Classifications  
D
E
F
60-120  
100-200  
160-320  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD612 2SD612K  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD612 2SD612K  
4

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