2SD612K [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SD612K |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB632/632K
·High collector dissipation
·Wide area of safe operation
APPLICATIONS
·25V/35V, 2A low-frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD612
2SD612K
2SD612
2SD612K
25
VCBO
Collector-base voltage
Open emitter
V
35
25
VCEO
Collector-emitter voltage
Open base
V
35
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-peak
Open collector
5
V
A
A
2
ICM
3
1
Ta=25℃
TC=25℃
PD
Total power dissipation
W
10
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
25
35
25
35
5
TYP.
MAX
UNIT
2SD612
2SD612K
2SD612
2SD612K
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA; RBE=∞
V
Collector-base
breakdown voltage
V(BR)CBO
IC=10μA ;IE=0
IE=10μA ;IC=0
V
V(BR)EBO
VCEsat
VBEsat
ICBO
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=1.5A ;IB=0.15A
0.3
1.1
0.8
1.5
1
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=1.5A ;IB=0.15A
VCB=20V; IE=0
V
μA
μA
IEBO
VEB=4V; IC=0
1
hFE-1
hFE-2
fT
IC=0.5A ; VCE=2V
IC=1.5A ; VCE=2V
IC=50mA ; VCE=10V
f=1MHz ; VCB=10V
60
30
320
DC current gain
Transition frequency
100
30
MHz
pF
COB
Collector output capacitance
Switching times
ton Turn-on time
tf
0.05
0.10
0.40
μs
μs
μs
IC=500mA ; VCE=12V
IB1=-IB2=50mA
Fall time
tstg
Storage time
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
4
相关型号:
©2020 ICPDF网 联系我们和版权申明