2SD1910 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1910 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
DESCRIPTION
·With TO-3PFM package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in TV horizontal output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
600
V
Open collector
6
V
3
6
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25ꢀ
40
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)
VBE(sat)
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A , IB=0
Collector-emitter saturation voltage IC=2.5A ; IB=0.8A
600
5.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2.5A ; IB=0.8A
VCB=800V; IE=0
VEB=6V; IC=0
IC=0.5A ; VCE=5V
IF=3A
V
µA
mA
IEBO
50
8
200
25
hFE
Diode forward voltage
2.0
V
VF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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