2SD1912 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1912 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Wide Area of Safe Operation
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
60
V
V
V
A
A
60
6
3
Collector Current-Continuous
Collector Current-Peak
ICM
8
Collector Power Dissipation
@Ta=25℃
1.75
30
PC
W
Collector Power Dissipation
@TC=25℃
Junction Temperature
Storage Temperature
150
-55~150
℃
℃
TJ
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
60
60
6
TYP. MAX UNIT
IC= 5mA; RBE= ∞
V
V
V
IC= 1mA; IE= 0
IE= 1mA; IC= 0
IC= 2A; IB= 0.2A
IC= 0.5A; VCE= 5V
VCB= 40V; IE= 0
VEB= 4V; IC= 0
1.0
1.0
V
VCE
(sat)
(on)
V
VBE
ICBO
100
100
280
μA
μA
IEBO
hFE-1
hFE-2
COB
fT
Emitter Cutoff Current
DC Current Gain
IC= 0.5A; VCE= 5V
IC= 3A; VCE= 5V
IE= 0; VCB= 10V, f= 1MHz
IC= 0.5A; VCE= 5V
70
20
DC Current Gain
Output Capacitance
40
pF
Current-Gain—Bandwidth Product
100
MHz
hFE-1 Classifications
Q
R
S
70-140
100-200 140-280
2
isc Website：www.iscsemi.cn
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