2SD1554 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1554 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1554
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
1500
600
5
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
3.5
A
IB
Base current
1
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
W
ꢀ
150
-55~150
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1554
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=0.2A , IC=0
5
Collector-emitter saturation voltage IC=3A; IB=0.8A
5.0
8.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=3A ;IB=0.8A
V
VCB=500V; IE=0
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=3.5A
µA
hFE
8
fT
Transition frequency
Collector output capacitance
Diode forward voltage
Fall time
3
MHz
pF
V
COB
95
2.0
1.0
VF
0.5
µs
tf
ICP=3A ;IB1(end)=0.8A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1554
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
相关型号：
2SD1556
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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