2SC3212A [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3212A |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SC3212
800
900
500
8
VCBO
Collector-base voltage
Open emitter
V
2SC3212A
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
V
A
A
A
Open collector
7
ICM
IB
Collector current-peak
Base current
15
4
TC=25ꢀ
Ta=25ꢀ
100
3
PC
Collector power dissipation
W
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=0.2A;L=25mH
500
V
V
V
IC=5A ;IB=1A
1.0
1.5
VBEsat
IC=5A ;IB=1A
2SC3212
Collector
VCB=800V; IE=0
VCB=900V; IE=0
VEB=5V; IC=0
ICBO
100
100
µA
µA
cut-off current
2SC3212A
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=0.1A ; VCE=5V
IC=5A ; VCE=5V
IC=0.5A ; VCE=10V;f=1MHz
15
8
DC current gain
Transition frequency
3.5
MHz
Switching times
2SC3212
1.0
1.2
2.5
1.0
1.2
ton
tstg
tf
Turn-on time
µs
µs
µs
2SC3212A
IC=5A; VCC=200V
IB1=-IB2=1A
Storage time
Fall time
2SC3212
2SC3212A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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