2SC3214_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC3214_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3214
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1200
Open base
800
V
Open collector
7
V
5
A
ICM
Collector current-peak
Base current
8
3
A
IB
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
Thermal resistance from junction to mounting base
1.0
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3214
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
800
1200
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=10mA ; IB=0
IC=1mA ; IE=0
V
IE=1mA ; IC=0
V
IC=2.5A; IB=0.5A
IC=2.5A; IB=0.5A
VCB=960V; IE=0
VEB=5V; IC=0
1.0
1.5
10
V
V
ICBO
μA
μA
IEBO
Emitter cut-off current
10
hFE
DC current gain
IC=1.5A ; VCE=5V
10
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3214
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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