2SC1170A [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1170A |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1170
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=?)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1200
500
UNIT
V
Open base
V
Open collector
6
V
3.5
A
IB
Base current
1.0
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25?
50
W
?
Tj
150
Tstg
-55~150
?
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
2.5
? /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1170
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICES
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=100mA ;IB=0
500
IC=2.5A; IB=0.6A
IC=2.5A; IB=0.6A
VCE=1200V; VBE=0
VCB=800V; IE=0
VEB=5V; IC=0
10
1.2
1.0
20
V
V
mA
µA
µA
ICBO
IEBO
20
hFE-1
DC current gain
IC=0.5A ; VCE=10V
IC=3A ; VCE=10V
IC=0.5A ; VCE=10V
10
5
hFE-2
DC current gain
fT
Transition frequency
4
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1170
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
2SC1172
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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