2SC1172_2014 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC1172_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1172
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For use in color TV horizontal
output applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
UNIT
V
Open emitter
Open base
V
Open collector
6
V
5
A
PT
Total power dissipation
Junction temperature
Storage temperature
Tmb=25℃
50
W
℃
℃
Tj
150
Tstg
-55~150
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1172
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
600
6
TYP.
MAX
UNIT
V
IC=0.1A ; IB=0
IE=1mA ; IC=0
IC=4A; IB=1A
V
5.0
1.5
10
V
IC=4A; IB=1A
V
VCB=800V; IE=0
VEB=6V; IC=0
μA
mA
IEBO
Emitter cut-off current
0.1
hFE
DC current gain
IC=2A ; VCE=10V
IC=0.5A ; VCE=10V
10
fT
Transition frequency
3
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1172
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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