2SC1173_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC1173_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1173
DESCRIPTION
·With TO-220 package
·Complement to type 2SA473
·Collector current :IC=3A
·Collector dissipation:PC=10W@TC=25℃
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
V
30
Open base
30
V
Open collector
5
3
V
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25℃
10
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1173
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
30
30
5
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
IC=0.5mA ;IE=0
IE=1mA ;IC=0
V
V
IC=2A IB=0.2A
0.8
1.0
1.0
1.0
240
V
IC=0.5A ; VCE=2V
VCB=20V;IE=0
V
ICBO
μA
μA
IEBO
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
IC=2.5A ; VCE=2V
IE=0; VCB=10V;f=1MHz
IC=0.5A ; VCE=2V
70
25
hFE-2
DC current gain
COB
Output capacitance
35
pF
fT
Transition frequency
100
MHz
hFE-1 classifications
O
Y
70-140
120-240
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1173
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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