2N6654 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6654 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6654
DESCRIPTION
·With TO-3 package
·High voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
·Switcing regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
MAXIMUN RATINGS(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
500
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
350
V
Open collector
6
V
20
A
ICM
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
30
A
PT
Tc=25ꢀ
150
W
ꢀ
Tj
200
Tstg
-65~200
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6654
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
VCEsat-1
VCEsat-2
VBEsat
PARAMETER
CONDITIONS
MIN
350
500
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
Collector-emitter breakdown voltage IC=1mA ; IE=0
V
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=10A; IB=2A
IC=15A; IB=3A
IC=15A; IB=3A
1.8
2.2
1.8
V
V
V
VCE=500V;VBE(off)=-1.5V
TC=150ꢀ
0.1
2.0
ICEV
mA
mA
IEBO
VEB=6V; IC=0
0.1
50
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=10A ; VCE=15V
15
10
hFE -2
DC current gain
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6654
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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